Method for improving performance of CsPbBr3 perovskite QLED through polymer compounding

A polymer, perovskite technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, etc., can solve the problem of incompatibility with industrial production, affecting device efficiency, and poor repeatability and other problems, to achieve the effect of improving color rendering quality and device stability life, balancing transmission, and improving quality

Active Publication Date: 2020-02-28
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, neither element doping nor the introduction of ligands for surface passivation in material synthesis can change the CsPbX 3 The inherent P and N characteristics of perovskite quantum dots affect the further improvement of device efficiency
In addition, the traditional method of achieving balanced carrier injection by adjusting the device structure to construct high-efficiency LEDs has problems such as high cost, poor repeatability, and incompatibility with industrial production.

Method used

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  • Method for improving performance of CsPbBr3 perovskite QLED through polymer compounding
  • Method for improving performance of CsPbBr3 perovskite QLED through polymer compounding
  • Method for improving performance of CsPbBr3 perovskite QLED through polymer compounding

Examples

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Effect test

Embodiment 1

[0028] (1) Ultrasonic dissolve 1mmol PbBr in 25ml toluene 2 , 2mmol TOAB, obtain the Pb precursor;

[0029] (2) Dissolve 20mg of PTAA in 5ml of toluene;

[0030] (3) Add 4ml PTAA toluene solution in the above-mentioned Pb precursor;

[0031] (4) Dissolve 0.3mmol CsCO in 4ml octanoic acid 3 , to obtain the Cs precursor;

[0032] (5) ultrasonically dissolve 0.3mmol DDAB in 10mL toluene solution;

[0033] (6) Inject the Cs precursor into the blend of the lead precursor and the polymer with a syringe, stir for 8 minutes, add 3 mL of DDAB toluene solution, and stir for 2 minutes to obtain PTAA-CsPbBr 3 Quantum dot stock solution;

[0034] (7) Add 40mL of ethyl acetate to the above-mentioned quantum dot stock solution, centrifuge to take the precipitate, disperse the precipitate with 8mL of n-hexane, and obtain PTAA-CsPbBr 3 quantum dots;

[0035] (8) PEDOT:PSS, PTAA and PTAA-7-CsPbBr 3 Quantum dots were spin-coated on ITO glass, and then TPBi, LiF and Al electrodes were the...

Embodiment 2

[0037] Using the same process as in Example 1, the difference is that the PTAA in step 2) of Example 1 is replaced by PVK, and other conditions remain the same.

Embodiment 3

[0039] Using the same process as in Example 1, the difference is that the PTAA in step 2) of Example 1 is replaced by Poly-TPD, and other conditions remain the same.

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Abstract

The invention discloses a method for improving the performance of a CsPbBr3 perovskite QLED through polymer compounding. According to the method, a polymer is introduced into synthesis of CsPbBr3 perovskite quantum dots, wherein PbBr2 and TOAB are dissolved in toluene to form a lead precursor, the lead precursor is blended with a toluene solution of a polymer, a Cs precursor is injected into a blended solution of a Pb precursor and the polymer, a toluene solution of DDAB is added after a reaction is performed, finally purifying is performed to obtain quantum dots, and a QLED is constructed byusing the quantum dots as a light emitting layer. According to the invention, the polymer is added into the precursor to balance carrier transmission, so that the performance of the QLED device is effectively improved.

Description

technical field [0001] The invention relates to a kind of polymer composite promotion CsPbBr 3 The method for perovskite QLED performance belongs to the technical field of optoelectronic semiconductor materials and devices. Background technique [0002] CbBr 3 Perovskite has the advantages of low defect density, narrow luminescence peak half-width, continuously adjustable optical bandgap and high carrier mobility, etc., and is widely used in optoelectronic devices such as LEDs, lasers, transistors, and photodetectors. is widely used. However, neither element doping nor the introduction of ligands for surface passivation in material synthesis can change the CsPbX 3 The inherent P and N characteristics of perovskite quantum dots affect the further improvement of device efficiency. In addition, the traditional method of achieving balanced carrier injection by adjusting the device structure to construct high-efficiency LEDs has problems such as high cost, poor repeatability,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/66B82Y20/00B82Y30/00B82Y40/00H01L51/50
CPCC09K11/025C09K11/665B82Y20/00B82Y30/00B82Y40/00H10K50/115
Inventor 宋继中王田田方涛许蕾梦单青松杨林翔赵永丽袁诗晨
Owner NANJING UNIV OF SCI & TECH
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