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A kind of repairing method of nand flash memory defect

A repair method and defect technology, applied in the field of NAND flash memory devices, can solve the problems of less resources and long repair time, and achieve the effects of increasing data storage space, reducing test time, and reducing the number of bad blocks

Active Publication Date: 2022-02-11
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the case of a large number of defects or some extreme cases, it takes a long time to repair using this method, and this method does not guarantee the use of the least resources

Method used

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  • A kind of repairing method of nand flash memory defect
  • A kind of repairing method of nand flash memory defect
  • A kind of repairing method of nand flash memory defect

Examples

Experimental program
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Embodiment 1

[0093] figure 2 A conceptual layout of a NAND flash memory device according to an embodiment of the present invention is shown. Such as figure 2 As shown, it contains 2048 blocks and 2240 columns, including 2112 data columns and 128 redundant columns.

[0094] The NAND flash memory device includes 2048 data blocks numbered 0, 1, 2, 3, . . . 2047, and each block includes 64 pages. Each page includes 2240 columns, including 2112 data columns for recording data and 128 redundant columns. Each data column uses storage cells to store data in bytes. All these data disclosed in this embodiment are exemplary and are not limited to these specific values.

[0095] image 3 Shows a schematic diagram of a NAND flash memory array with virtual redundant rows, including 2176 blocks (block, including 2048 data blocks and 128 redundant rows), and 2240 columns (column, including 2112 data columns and 128 redundant rows) List).

[0096] refer to Figure 4 , describes a method for repai...

Embodiment 2

[0157] In steps S110 to S250, it is the second method of the present disclosure. After the repair solution is obtained through the method introduced above, the number of block defects is reduced through this method, that is, column redundancy is used to replace block defects as much as possible.

[0158] Step S170 starts

[0159] return Figure 7 , when proceeding to step S170, an available repair solution has been obtained, but the number of defective blocks is not the minimum, which will cause some blocks to be marked as bad blocks and be wasted. This method requires the result obtained by the first method optimize.

[0160] Step S200 judging redundant columns

[0161] Firstly, proceed from step S170 to step S200, which will determine whether the redundant columns are used up, that is, determine whether the number of remaining redundant columns is 0.

[0162] In this step, if the redundant columns have been used up, it means that the repair result obtained by the first m...

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Abstract

The invention discloses a method for repairing defects in NAND flash memory. Sequentially sort the defective blocks and defective columns; use redundancy to replace the data row and data column at the location of the defect according to the sequentially sorted list: use the redundant column to repair the defective column, and write the repair data to the flash memory to make the replacement take effect; The defective block is first replaced by a virtual redundant row, and then the address of the block corresponding to the defective block needs to be written into the flash memory, and the defective block is marked as a bad block. The method makes the repair algorithm of the NAND flash memory more concise, thereby making the whole process more efficient and improving the output of the test equipment.

Description

technical field [0001] The invention relates to the field of NAND flash memory devices, in particular to a method for repairing NAND flash memory defects. Background technique [0002] There are mainly three types of defects in NAND flash memory: row defects, column defects and scatter defects. [0003] For row defects, the block corresponding to the row is usually marked as a bad block; [0004] Replace column defects with redundant columns; [0005] Be the main problem that the present invention solves for scatter point defect, often can not reach better test result because only using redundant row to replace the column where scatter point is at, cause chip to be screened (promptly cause chip test because repairing algorithm or test condition are unreasonable) failure), thereby affecting yield. [0006] In the prior art, a method and device for repairing defects in NAND flash memory devices, publication number: CN105097045A, publication date: 2015-11-25, can better solv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/00G11C16/04
CPCG11C29/78G11C29/82G11C29/838G11C16/0483G11C2029/4402
Inventor 张朝锋宋炜哲何少婷席隆宇
Owner XI AN UNIIC SEMICON CO LTD
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