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Method for reducing effective electromechanical coupling coefficient of ultrahigh-frequency bulk acoustic wave resonator

A bulk acoustic wave resonator, electromechanical coupling technology, applied in electrical components, impedance networks, etc., can solve the problems of large effective electromechanical coupling coefficient, large relative bandwidth of filter, excessive electromechanical coupling coefficient, etc., to reduce the effective electromechanical coupling coefficient. Effect

Active Publication Date: 2020-03-17
武汉敏声新技术有限公司
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Problems solved by technology

The effective electromechanical coupling coefficient of UHF BAW resonators is very large, and the relative bandwidth of the filter built is also large, which makes it possible to use UHF and large bandwidth filters. However, due to the excessively large Electromechanical coupling coefficient, which makes it limited in the application of high-frequency narrow-band filters

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  • Method for reducing effective electromechanical coupling coefficient of ultrahigh-frequency bulk acoustic wave resonator
  • Method for reducing effective electromechanical coupling coefficient of ultrahigh-frequency bulk acoustic wave resonator
  • Method for reducing effective electromechanical coupling coefficient of ultrahigh-frequency bulk acoustic wave resonator

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] figure 1 and figure 2 is the basic structure of a traditional UHF resonator, where figure 2 yes figure 1 Enlarged view of the effective area of ​​the UHF resonator;

[0028] Figure 3-Figure 5 It is a schematic diagram of the three-layer structure proposed by the present invention, specifically including a piezoelectric layer 101, an intermediate dielectric layer 102, and an interdigital electrode 103, wherein the material of the piezoelectric lay...

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Abstract

The invention discloses a method for reducing the effective electromechanical coupling coefficient of an ultrahigh-frequency bulk acoustic wave resonator, and the method comprises the steps: depositing an intermediate dielectric layer between an interdigital electrode and a piezoelectric layer, and forming a three-layer structure of the interdigital electrode, an intermediate dielectric layer anda piezoelectric layer; applying voltages with opposite polarities to adjacent electrode fingers in the interdigital electrodes, generating inductive charges on the piezoelectric layer, and generatingan inverse piezoelectric effect; enabling the intermediate dielectric layer to gather induced charges on the surface, in contact with an electrode, of the intermediate dielectric layer under the common action of voltage on the interdigital electrode and the piezoelectric layer; adjusting the electromechanical coupling coefficient of the resonator by adjusting the thickness of the intermediate dielectric layer or the dielectric constant, wherein the dielectric constant can be changed by selecting materials with different dielectric constants. According to the invention, the effective electromechanical coupling coefficient of the ultrahigh frequency resonator is reduced, so that the resonator can be applied to a narrow-band filter.

Description

technical field [0001] The invention relates to a method for reducing the effective electromechanical coupling coefficient of an ultra-high frequency bulk acoustic wave resonator. Background technique [0002] The rapid development of wireless and mobile communication systems is driving rapid innovation in component performance and system integration technologies. In order to obtain faster signal processing and reduce the complexity of integration, micro-electromechanical system (MEMS) resonators, which are miniaturized and compatible with CMOS technology, have become the core devices of the new generation, so high-performance MEMS resonator technology is used as an advanced wireless The fundamental components of the RF front-end of communication systems are in high demand. [0003] At present, RF filters are generally built by surface acoustic wave resonators (SAW) and film bulk acoustic resonators (FBAR), but for higher frequency filters, the interdigital electrodes of su...

Claims

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Application Information

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IPC IPC(8): H03H9/54
CPCH03H9/54
Inventor 孙成亮童欣刘婕妤周杰谢英邹杨
Owner 武汉敏声新技术有限公司