A Method for Reducing Effective Electromechanical Coupling Coefficient of UHF Bulk Acoustic Resonator
A bulk acoustic wave resonator, electromechanical coupling technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of large effective electromechanical coupling coefficient, large relative bandwidth of the filter, and excessive electromechanical coupling coefficient, so as to reduce the effective electromechanical coupling coefficient Effect
Active Publication Date: 2021-02-19
武汉敏声新技术有限公司
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Problems solved by technology
The effective electromechanical coupling coefficient of UHF BAW resonators is very large, and the relative bandwidth of the filter built is also large, which makes it possible to use UHF and large bandwidth filters. However, due to the excessively large Electromechanical coupling coefficient, which makes it limited in the application of high-frequency narrow-band filters
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[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0027] figure 1 and figure 2 is the basic structure of a traditional UHF resonator, where figure 2 Yes figure 1 Enlarged view of the effective area of the UHF resonator;
[0028] Figure 3-Figure 5 It is a schematic diagram of the three-layer structure proposed by the present invention, specifically including a piezoelectric layer 101, an intermediate dielectric layer 102, and an interdigital electrode 103, wherein the material of the piezoelectric lay...
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The invention discloses a method for reducing the effective electromechanical coupling coefficient of an ultra-high frequency bulk acoustic wave resonator. The method is to deposit an intermediate dielectric layer between the interdigital electrode and the piezoelectric layer to form the interdigital electrode, the intermediate dielectric layer, and the piezoelectric layer. The three-layer structure of the electric layer; the adjacent electrode fingers in the interdigital electrodes are applied with opposite voltages, and induced charges are generated in the piezoelectric layer, resulting in a reverse piezoelectric effect; the voltage and voltage of the intermediate dielectric layer on the interdigital electrodes Under the common action of the electric layer, the induced charge is accumulated on the surface in contact with the electrode; the electromechanical coupling coefficient of the resonator is adjusted by adjusting the thickness of the intermediate dielectric layer or the dielectric constant, and the change of the dielectric constant can be achieved by selecting different dielectrics. Constant material to achieve. The invention reduces the effective electromechanical coupling coefficient of the ultra-high frequency resonator, making it possible for the resonator to be used in a narrow-band filter.
Description
technical field [0001] The invention relates to a method for reducing the effective electromechanical coupling coefficient of an ultra-high frequency bulk acoustic wave resonator. Background technique [0002] The rapid development of wireless and mobile communication systems is driving rapid innovation in component performance and system integration technologies. In order to obtain faster signal processing and reduce the complexity of integration, micro-electromechanical system (MEMS) resonators, which are miniaturized and compatible with CMOS technology, have become the core devices of the new generation, so high-performance MEMS resonator technology is used as an advanced wireless The fundamental components of the RF front-end of communication systems are in high demand. [0003] At present, RF filters are generally built by surface acoustic wave resonators (SAW) and film bulk acoustic resonators (FBAR), but for higher frequency filters, the interdigital electrodes of su...
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IPC IPC(8): H03H9/54
CPCH03H9/54
Inventor 孙成亮童欣刘婕妤周杰谢英邹杨
Owner 武汉敏声新技术有限公司