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A high-energy ion implanter beam adjustment device and adjustment method

A technology of high-energy ion and adjustment device, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of long adjustment process, long time, and reduced production efficiency of high-energy ion implanters, so as to achieve automatic adjustment and improve production efficiency. , to avoid the effect of menu parameter invalidation

Active Publication Date: 2022-04-01
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the long adjustment process of the two sub-menus, it takes a long time to build the menu, and the production efficiency of the high-energy ion implanter is reduced

Method used

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  • A high-energy ion implanter beam adjustment device and adjustment method
  • A high-energy ion implanter beam adjustment device and adjustment method

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Embodiment 1

[0058] In the embodiments of the present invention, divalent arsenic ions are used as an example for illustration. Among them, it is assumed that when the ion implantation energy is 2200Kev and the ion beam current size is 200 μA, the ion beam current size in the parameters of the first Faraday unit 205 and the second Faraday unit 206 corresponding to the packaged optimal menu parameters is 2000 μA, and the ion beam The flow shape is circular, and the ion position parameter is (200,200); the position parameter of the suction electrode 202 is (320,400,530); the main parameters of the ion source unit 201 are flow rate 0.85ccm, ionization voltage 66Kv and ionization current 1.5mA.

[0059] That is to say, when using this optimal menu to turn on the beam current, the position of the suction electrode 202 is (320,400,530); the main parameters of the ion beam current sent by the ion source unit 201 are flow rate 0.85ccm, ionization voltage 66Kv and ionization current 1.5mA However, ...

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PUM

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Abstract

The invention provides a high-energy ion implanter beam adjustment device and method, the device includes an ion source unit, a suction pole, a magnetic analyzer, a first and a second Faraday unit, a feedback adjustment unit, an acceleration unit, a focusing unit, a scanning unit, deflection unit, lens group and target chamber; ions are sucked out by the suction pole next to the ion source unit, the first Faraday unit is used to measure the size parameter of the ion beam current, and the second Faraday unit is arranged before the acceleration unit to measure the ion beam current Shape and position parameters; the feedback adjustment unit receives and adjusts the internal parameters of the ion source unit and the position of the suction electrode according to the size of the ion beam measured by the first Faraday unit and the shape and position of the ion beam measured by the second Faraday unit parameters and / or magnetic analyzer parameters, control the size, shape and position parameters of the ion beam before entering the acceleration unit to meet the requirements of the size, shape and position parameters of the ion beam in the optimal menu of the acceleration unit.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing and relates to ion implantation technology, in particular to a device and method for adjusting the beam current of a high-energy ion implanter. Background technique [0002] With the shrinking of integrated circuit manufacturing process nodes, ion implantation technology has gradually replaced the diffusion process due to its great advantages in the controllability of doping concentration, doping size and doping angle, and has become a must in the integrated circuit manufacturing process. less technical. Ion implantation technology ionizes gas molecules into ions, then accelerates the ions to the target energy through the acceleration unit, and finally implants them on the surface of the silicon wafer. During the ion implantation process, the implantation depth can be controlled by controlling the ion energy, and the implantation time and implantation dose can be controlled by cont...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/24H01J37/317
CPCH01J37/3171H01J37/243
Inventor 陈张发曾绍海
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT