Scanning electron microscopic imaging method

Abstract

The invention discloses a scanning electron microscopic imaging method, and belongs to the technical field of microscopic imaging. The scanning electron microscopic imaging method comprises the stepsof scanning the target object under the diaphragms with different convergence angles by using a scanning electron microscope to obtain a diffraction pattern; and mixing the diffraction patterns corresponding to the diaphragms to obtain a mixed diffraction pattern, performing multiple iterative calculations according to the mixed diffraction pattern to reconstruct O (r), taking the Oz (r) reconstructed by final iterative calculations as a final complex amplitude distribution function of the target object, and obtaining a reconstructed target object image according to the amplitude and phase ofthe Oz (r). The method aims to overcome the defects in the prior art. In order to overcome the defect that a diffraction pattern generated by a single diaphragm in a stacked imaging method can only obtain a reconstructed image of part of frequency band information of a target object, the invention provides a scanning electron microscopic imaging method which can obtain high-frequency characteristics and low-frequency characteristics of the target object, so that a clear and complete target object image can be obtained.

Description

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AI Technical Summary

Benefits of technology

This patented technology allows for better resolution when analyzing samples through an electrostatic microscope (ESM). By focusing on specific areas within each sample's surface, this technique provides more accurate results compared to previous methods such as SECAM or TEM.

Problems solved by technology

Technological Problem addressed by this patented technique involves improving the quality of depth resolved optical tomographic techniques such as laser interference correlation or Fourier transform infrared cameras. These methods rely heavily on collecting multiple sets of scattered light patterns over large areas called targets, resulting in improved accuracy when analyzing these scenes. Additionally, it suggests proposing ways to improve the sensitivity of certain types of probabilities like scatterers during reflections caused by external sources.

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