Semiconductor discharge tube with negative resistance characteristic and manufacturing method thereof
A technology with negative resistance characteristics and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problem of high residual voltage of devices, difficult negative resistance effects of devices, and poor protection of subsequent circuits, etc. problem, to achieve the effect of improving the surge capacity and reducing the residual voltage
Pending Publication Date: 2020-06-02
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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Problems solved by technology
Due to the long length of the base region, it is difficult for the device to produce a negative resistance effect
The residual voltage of the device is high, and the subsequent circuit cannot be better protected
Method used
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[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0044] Such as Figure 3-Figure 6 All are cross-sectional views of semiconductor discharge tubes with negative resistance characteristics of different structures made by the semiconductor discharge tube manufacturing method with negative resistance characteristics, and image 3 the difference is, Figure 4 The number of P1 areas in the center is several set side by side, which is the same as image 3 the difference is, Figure 5 is made of two image 3 The stru...
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Abstract
The invention provides a semiconductor discharge tube with a negative resistance characteristic and a manufacturing method thereof. The semiconductor discharge tube comprises a substrate, a P2 region,an N1 region, a P1 region, a front metal electrode and a back metal electrode, wherein the P2 region is prepared on one side of the substrate by using a doping process; the N1 region is prepared on one side of the P2 region by using a doping process; the P1 region is prepared on one side of the N1 region by using a doping process; the front metal electrode is prepared at one side of the P1 region; and the back metal electrode is prepared by performing metal contact treatment on the back surface of the thinned substrate. According to the invention, the purposes of reducing residual voltage andimproving surge capability can be achieved.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor discharge tube with negative resistance characteristics and the semiconductor discharge tube. Background technique [0002] At present, semiconductor discharge tube (Thyristor Surge Suppresser) is also called: protective thyristor surge suppression thyristor, thyristor surge suppressor, surge suppression thyristor, TSS, solid discharge tube. It is a kind of overvoltage protection device, which is made by the principle of thyristor. It relies on the breakdown current of PN junction to trigger the device to conduct and discharge, and it can flow a large surge current or pulse current. The device itself absorbs the surge energy to protect the downstream circuit from surge damage. Devices are widely used in communication ports and signal ports. Strong surge capability and low residual voltage are the direction of device optimization...
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IPC IPC(8): H01L29/06H01L29/87H01L21/329
CPCH01L29/0603H01L29/87H01L29/66098
Inventor 单少杰苏海伟魏峰王帅张英鹏
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS