Processing method using laser lift-off and planarizing jig

Abstract

In this processing method using laser lift-off, a layered body (1) that includes a sapphire substrate (11) and micro-LEDs (12) formed on one surface of the sapphire substrate is irradiated with laserlight via pulse oscillation from the other surface of the sapphire substrate, thereby causing the micro-LEDs to detach from the sapphire substrate. This processing method comprises: a step for planarizing the sapphire substrate by pressing any warpage of the sapphire substrate using an action external to the layered body; and a step for causing the micro-LEDs to detach from the sapphire substrateby moving the layered body placed on a stage (91) relative to an optical system (6) that emits laser light in a state where the sapphire substrate is planarized, while irradiating the sapphire substrate with the laser light from the other surface thereof such that the focal position of the laser light aligns with the boundary of the sapphire substrate and the micro-LEDs. The foregoing makes it possible to provide a processing method using laser lift-off that can cause micro-LEDs to be effectively detached from a sapphire substrate even if there is warping of the sapphire substrate.

Description

technical field [0001] The present invention relates to a processing method for peeling off a micro LED from a sapphire substrate by laser lift-off of the micro LED formed on a sapphire substrate in a manufacturing process of a flat panel display using micro LEDs (Light Emitting Diodes) as pixels, and particularly relates to Even if the sapphire substrate is warped, the flatness of the sapphire substrate caused by the warpage is improved, and the micro LED can be peeled off from the sapphire substrate. A processing method and planarization jig using laser lift off. Background technique [0002] Conventionally, there is known a method of removing a sapphire substrate by laminating a semiconductor laminate including a light-emitting semiconductor layer on a sapphire substrate and performing laser lift-off in which the boundary between the sapphire substrate and the semiconductor laminate is peeled off by laser irradiation. However, when the sapphire substrate is warped, the fo...

AI Technical Summary

Problems solved by technology

However, when the sapphire substrate is warped, the focal position of the laser light will be misaligned, and there is a problem that it is difficult to remove the sapphire substrate by laser lift-off (for example, refer to Patent Document 1).

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