A one-dimensional CSCU based 2 i 3 Micron-line polarized ultraviolet photodetector and preparation method thereof

A technology of micron wires and ultraviolet light, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of insufficient stability and lead toxicity, harmful to humans and the environment, and no perovskite polarized light detection, etc. problem, to achieve the effect of large photocurrent anisotropy ratio and enhanced response

Active Publication Date: 2022-02-08
ZHENGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the short-wavelength ultraviolet region, no perovskite polarized light detection has been reported.
More importantly, the perovskite polarized light detectors reported so far are all traditional lead halide perovskites, which are inherently deficient in material stability and lead toxicity, and are harmful to humans and the environment (M.Pantaler, K.T.Cho , V.I.E. Queloz, I.G. Benito, C. Fettkenhauer, I. Anusca, M.K. Nazeeruddin, D.C. Lupascu, and G. Grancini, ACS Energy Lett. 3, 1781 (2018))

Method used

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  • A one-dimensional CSCU based <sub>2</sub> i <sub>3</sub> Micron-line polarized ultraviolet photodetector and preparation method thereof
  • A one-dimensional CSCU based <sub>2</sub> i <sub>3</sub> Micron-line polarized ultraviolet photodetector and preparation method thereof
  • A one-dimensional CSCU based <sub>2</sub> i <sub>3</sub> Micron-line polarized ultraviolet photodetector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] (1) Cleaning the insulating substrate (1), the substrate used is quartz.

[0044] The substrate (1) is chemically cleaned, and the steps are as follows: first, put the substrate in distilled water and ultrasonically clean it for 10 minutes; then use acetone and ethanol solutions to ultrasonically clean it for 10 minutes each, and recirculate once; then rinse it with deionized water , dried with high-purity nitrogen for later use.

[0045] (2) Pt interdigitated electrodes (2) were prepared on the quartz substrate by photolithography combined with thermal evaporation technology.

[0046] Using the positive resist BP212 as a mask, the pattern of the interdigitated electrodes was etched using ultraviolet lithography technology. The specific process is as follows: a) Evenly spin-coat the BP212 photoresist on the cleaned quartz substrate, and the spin-coating condition is a low speed of 600 Rotate per minute / 5 seconds, high speed 3500 rpm / 25 seconds; b) anneal the photoresis...

Embodiment 2

[0054] (1) Cleaning the insulating substrate 1, the substrate used is quartz.

[0055] The method for cleaning the quartz substrate in this embodiment is the same as that in Embodiment 1.

[0056] (2) The Pt interdigitated electrodes 2 are prepared on the quartz substrate by photolithography combined with thermal evaporation technology.

[0057] The preparation method of the Pt interdigitated electrode in this embodiment is the same as that in Embodiment 1.

[0058] (3) Preparation of high-quality one-dimensional CsCu by chemical vapor deposition 2 I 3 micron wire3.

[0059] The specific steps are: a) Weigh 727.5 mg of CsI (Aladdin brand) and 1066.5 mg of CuI (Aladdin brand) with a high-precision electronic balance, and then mix the two powders evenly; b) place the mixed powder of CsI and CuI In the high temperature zone of the horizontal tube furnace, the prepared Pt interdigitated electrode sample is placed in the low temperature zone of the horizontal tube furnace, ensu...

Embodiment 3

[0063] (1) Cleaning the insulating substrate 1, the substrate used is flexible PET.

[0064] The cleaning steps are as follows: first, soak the substrate in a cleaning agent (Liby brand liquid detergent) for 20 minutes, then rinse it with tap water; then use acetone and ethanol solutions to ultrasonically clean it for 5 minutes each, and recirculate once; After rinsing with deionized water, blow dry with high-purity nitrogen before use.

[0065] (2) The Pt interdigitated electrodes 2 are prepared on the quartz substrate by photolithography combined with thermal evaporation technology.

[0066] The preparation method of the Pt interdigitated electrode in this embodiment is the same as that in Embodiment 1. Also, the Pt interdigitated electrodes can be replaced by Au or Ni interdigitated electrodes.

[0067] (3) Preparation of one-dimensional CsCu by anti-solvent method 2 I 3 micron wire3.

[0068] In this embodiment, one-dimensional CsCu 2 I 3 The preparation method of t...

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Abstract

The object of the present invention is to provide a kind of based on one-dimensional CsCu 2 I 3 The polarized ultraviolet light detector of the micron line and its preparation method prepare a high-performance, environment-friendly polarized ultraviolet light detector. The detector includes an insulating substrate, on which interdigitated electrodes and CsCu 2 I 3 Micron wire. On the one hand, the present invention utilizes CsCu 2 I 3 The external one-dimensional shape of the micron wire and the large band gap of the material realize the polarization detection of ultraviolet light. On the other hand, the anisotropy of the material itself is used to further strengthen the response of the device to polarized light, and it is expected to obtain a large photocurrent. Anisotropy ratio. Moreover, the material itself is stable, environmentally friendly and non-toxic, which also overcomes the shortcomings of traditional lead halide perovskite materials, thus providing a feasible solution for the design and preparation of efficient, stable, and environmentally friendly polarized ultraviolet light detectors.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, in particular to a one-dimensional CsCu based 2 I 3 Micron-line polarized ultraviolet photodetector and its preparation method. Background technique [0002] High-performance photodetectors are the key to the application technology in the field of optoelectronics and one of the core components of optical communication technology. As a special optoelectronic device, polarized light detectors have very important applications in the fields of optical communication, imaging, optical radar and navigation. The preparation of polarized light detectors has high requirements on the working material, such as the shape and structure anisotropy of the material itself. At present, common polarized light detectors are mainly made of two-dimensional materials, such as GeAs (Z.Zhou, M.S.K.Long, L.F. Pan, X.T.Wang, M.Z.Zhong, M.Blei, J.L.Wang, J.Z.Fang, S.Tongay, W.D.Hu, J.B.Li, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/09H01L31/18
CPCH01L31/032H01L31/09H01L31/18Y02P70/50
Inventor 史志锋李营梁文晴王林涛马敬丽李新建
Owner ZHENGZHOU UNIV
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