Three-dimensional memory device and manufacturing method thereof
A storage device, three-dimensional technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of difficult and costly planar technology and manufacturing technology
Active Publication Date: 2021-08-17
YANGTZE MEMORY TECH CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, as the feature size of memory cells approaches the lower limit, planar processing and fabrication techniques become difficult and costly
Therefore, the storage density of planar memory cells approaches the upper limit
Method used
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[0014] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure may also be used in various other applications.
[0015] It should be noted that references in the specification to "one embodiment," "an embodiment," "example embodiments," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, but Each embodiment may not necessarily include the particular feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with a...
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Abstract
Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are provided. In an example, a 3D memory device includes a plurality of conductor layers extending over a substrate, a channel structure extending vertically through the conductor layers to the substrate, and a source structure extending through the conductor layers to the substrate. The channel structure may include a barrier layer having a plurality of barrier portions not connected to each other. Each barrier portion may include (i) a vertical barrier portion underlying the corresponding conductor layer, and (ii) at least one lateral barrier portion covering a respective lateral surface of the corresponding conductor layer. The channel structure may further include a memory layer having a plurality of memory portions not connected to each other, each memory portion under and in contact with a corresponding vertical barrier portion.
Description
technical field [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods of manufacturing the same. Background technique [0002] Planar memory cells are scaled down to smaller sizes by improving process technology, circuit design, programming algorithms, and manufacturing processes. However, as the feature size of the memory cell approaches the lower limit, the planar process and fabrication techniques become difficult and costly. Therefore, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can deal with the limited density of planar memory cells. A 3D memory architecture includes a memory array and peripherals for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of 3D memory devices and fabrication methods for forming 3D memory devices are disclosed herein. [0005] In one example, a 3D memory device may include: a plur...
Claims
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IPC IPC(8): H01L27/11568H01L27/11582H10B43/00H10B43/30H10B41/27H10B43/20H10B43/27H10B43/35
CPCH10B43/30H10B43/27H10B43/35
Inventor 薛磊姚兰薛家倩刘小欣
Owner YANGTZE MEMORY TECH CO LTD