Light-emitting diode and manufacturing method thereof

Abstract

The present invention discloses a light emitting diode, comprising: a first electrode electrically connected to a first semiconductor layer of the light emitting diode, and a second electrode electrically connected to the second semiconductor layer; and the first electrode and / or the second electrode sequentially comprise(s) the first reflective layer, a pad layer and a second reflective layer atleast partially covering the pad layer, the Young's modulus of the material of the first reflective layer and / or the second reflective layer is not less than 150 Gpa and the bulk modulus is not less than 200 Gpa, and it is helpful to improve the photoelectric characteristics of light-emitting diodes and improve product reliability.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a light-emitting diode with high-reliability electrodes. Background technique [0002] see figure 1 In consideration of the light extraction efficiency, the electrode structure design of the existing LED chip adds a high-reflectivity material to the electrode structure as the reflective layer 200 to improve light efficiency, but most of the high-reflective materials: such as silver, aluminum, etc., have poor characteristics. The stability of the product is reduced by the influence of the environment, temperature, humidity, pH, etc., so a metal protection layer 230 with low mobility is covered for protection, but this design can only prolong the reaction time of the reflective layer material and the environment, and cannot completely Avoid major abnormalities such as metal material migration or precipitation and electrode shedding, which will cause the terminal product ...

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Problems solved by technology

[0002] see figure 1 In consideration of the light extraction efficiency, the electrode structure design of the existing LED chip adds a high-reflectivity material to the electrode structure as the reflective layer 200 to improve light efficiency, but most of the high-reflective materials: such as silver, aluminum, etc., have poor characteristics. The stability of the product is reduced by the influence of the environment, temperature, humidity, pH, etc., so a metal protection layer 230 with low mobility is covered for protection, but this design can only prolong the reaction time of the reflective layer material and the environment, and cannot completely Avoid major abnormalities such as metal material migration or precipitation and electrode shedding, which will cause the terminal product module to fail to operate normally; and therefore, the electrode structure design will limit product design and application fields, such as high current and high voltage drive, extreme environments, etc.

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