Light-emitting diode and manufacturing method thereof

Abstract

The invention discloses a light emitting diode, which comprises a first electrode connected with a first semiconductor layer and a second electrode connected with a second semiconductor layer, whereinthe first electrode and / or the second electrode sequentially comprise / comprises a first reflecting layer, a connecting cushion layer and a second reflecting layer at least partially coating the connecting cushion layer, the material of the second reflecting layer comprises rhodium, platinum or ruthenium, and the first reflecting layer and the second reflecting layer are manufactured into a large-angle electrode structure through good stress characteristics, so that the photoelectric characteristics of the light-emitting diode is facilitated to be improved, and the product reliability is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a light-emitting diode with high-reliability electrodes. Background technique [0002] see figure 1 In consideration of the light extraction efficiency, the electrode structure design of the existing LED chip adds a high-reflectivity material to the electrode structure as the reflective layer 200 to improve light efficiency, but most of the high-reflective materials: such as silver, aluminum, etc., have poor characteristics. The stability of the product is reduced by the influence of the environment, temperature, humidity, pH, etc., so a metal protection layer 230 with low mobility is covered for protection, but this design can only prolong the reaction time of the reflective layer material and the environment, and cannot completely Avoid major abnormalities such as metal material migration or precipitation and electrode shedding, which will cause the terminal product ...

AI Technical Summary

Problems solved by technology

[0002] see figure 1 In consideration of the light extraction efficiency, the electrode structure design of the existing LED chip adds a high-reflectivity material to the electrode structure as the reflective layer 200 to improve light efficiency, but most of the high-reflective materials: such as silver, aluminum, etc., have poor characteristics. The stability of the product is reduced by the influence of the environment, temperature, humidity, pH, etc., so a metal protection layer 230 with low mobility is covered for protection, but this design can only prolong the reaction time of the reflective layer material and the environment, and cannot completely Avoid major abnormalities such as metal material migration or precipitation and electrode shedding, which will cause the terminal product module to fail to operate normally; and therefore, the electrode structure design will limit product design and application fields, such as high current and high voltage drive, extreme environments, etc.

Images