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Preparation method of functional film layer, preparation method of optoelectronic device and optoelectronic device

A technology of photoelectric devices and photoelectric devices, applied in the field of optics, can solve problems such as uneven distribution, and achieve the effects of improving uniformity, good luminous uniformity, and high external quantum efficiency

Active Publication Date: 2022-08-02
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a functional film layer, a method for preparing a photoelectric device, and a photoelectric device, so as to solve the technical problem in the prior art that the ink of the functional film layer diffuses in the sub-pixel pit, resulting in uneven distribution

Method used

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  • Preparation method of functional film layer, preparation method of optoelectronic device and optoelectronic device
  • Preparation method of functional film layer, preparation method of optoelectronic device and optoelectronic device
  • Preparation method of functional film layer, preparation method of optoelectronic device and optoelectronic device

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preparation example Construction

[0032] According to a first aspect of the present application, a method for preparing a functional film layer is provided, comprising the following steps: S1, providing a pixel substrate, the pixel substrate has a pixel defining layer, the pixel defining layer encloses a plurality of target areas, each target area is The area includes a bottom surface and a side surface; S2, provide a first solution, the first solution includes a first solvent and a solute, set the first solution in the target area, remove the first solvent, and form a hydrophobic layer on the side surface, the hydrophobic layer The surface energy is less than 30mN / m, and the hydrophobic layer covers more than 80% of the side surface; S3, provide a second solution, the second solution includes a second solvent, set the second solution in the target area, remove the second solvent, A functional film layer is formed on the surface; wherein, the surface tension of the first solution is 20-50 mN / m, the viscosity of...

Embodiment 1

[0056] Prepare a substrate with a pixel-defining layer (pixel isolation structure), the material of the pixel-defining layer is polyimide, the size of the bottom surface of the sub-pixel pits formed by the pixel-defining layer is 112 μm*112 μm, and the height of the pixel-defining layer is 2.49 μm micron, the volume of the sub-pixel pit is 31.2pL, the aforementioned substrate is cleaned in the order of acetone, deionized water, and ethanol before printing, and the O 2 Plasma cleaning for 10min; put the first solution (recipe in Table 1) into a 10pL printing nozzle, each nozzle prints 3 drops (ie 30pL) in the same sub-pixel pit of the above-mentioned substrate, then vacuum-drying and annealing at 200°C for 10 minutes , form a first hydrophobic layer on the side surface of the sub-pixel pit, the thickness of the first hydrophobic layer is about 13nm; then print the PEDOT:PSS solution (see Table 2 for the formula), and print it on the sub-pixel where the first hydrophobic layer ha...

Embodiment 2

[0058] The difference between this example and Example 1 is that after the PEDOT:PSS hole injection layer is formed, the first solution (see Table 1 for the recipe) is printed on the hole transport layer, dried in vacuum and annealed at 200°C for 10 minutes. A second hydrophobic layer is formed on the side surfaces of the sub-pixel pits, and the thickness of the second hydrophobic layer is about 26 nm; then, the TFB solution (see Table 3 for the formula) is printed into the sub-pixel pits where the second hydrophobic layer has been formed, and vacuum-dried for 10 minutes. The glove box was annealed at 150 °C for 30 min to form a TFB hole transport layer with a thickness of 25 nm.

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Abstract

The present invention provides a method for preparing a functional film layer, a method for preparing an optoelectronic device and an optoelectronic device. By arranging a hydrophobic layer on the side surface of a target area, when a second solution having the characteristics of the present application is arranged, the second solution It does not adhere to the side surface, so that the functional film layer is formed only on the bottom surface, and the uniformity of the functional film layer is improved at the same time. Through the formula design of the first solution, the first solution forms a coffee mark in the target area, and by utilizing the characteristics of the coffee mark, the solute of the first solution is dried and aggregated on the side surface of the target area to form a hydrophobic layer. The formula design of the second solution makes it difficult for the second solution to wet the hydrophobic layer, so that the second solution forms a functional film layer on the bottom surface. The quantum dot electroluminescent device prepared by the invention has good luminous uniformity and high external quantum efficiency.

Description

technical field [0001] The present invention relates to the field of optical technology, in particular, to a preparation method of a functional film layer, a preparation method of an optoelectronic device, and an optoelectronic device. Background technique [0002] In recent years, the solution method has gradually replaced the traditional evaporation method and has become a research hotspot in the manufacture of electroluminescent devices. The process of manufacturing electroluminescent devices mainly includes setting the corresponding functional inks into the corresponding pixels. Generally, pixels include a pixel defining layer and Light-emitting area, the light-emitting area is a pit surrounded by the pixel defining layer and the substrate. The pit is used to hold the ink. After the ink is dried, each film layer (each functional layer and the light-emitting layer) is formed, and each film layer and the upper and lower electrodes constitute a light-emitting area. device. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/135H10K50/15H10K50/17H10K71/00
Inventor 彭军军
Owner NANJING TECH CORP LTD