A photoelectrode for optogenetic stimulation and electrophysiological recording and its preparation method
A technology for recording electrodes and light stimulation, applied in diagnostic recording/measurement, circuits, applications, etc., can solve the problems of recording signal interference, polyimide flexible and unfavorable probe position fine-tuning, etc., and achieve the effect of improving quality and reducing influence
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Embodiment 1
[0052] The specific steps of the aforementioned LED photoelectrode preparation method for optogenetic stimulation and electrophysiological recording are as follows:
[0053] S1: Use a silicon wafer as the photoelectrode substrate, set the LED photo-stimulation layer 3 on the substrate, and realize the patterning of the micro-LED photo-stimulation sites through micro-processing technology; integrate multiple micro-LED photo-stimulation sites to realize Multi-channel photostimulation function.
[0054] S2: Deposit a layer of electromagnetic shielding layer 2 on the LED light stimulation layer 3, and reduce the electromagnetic interference of the LED to the recording channel through electromagnetic shielding.
[0055] S3: On the electromagnetic shielding layer 2, the recording electrode layer 1 is patterned by micro-processing technology, and multiple recording channels are integrated in the recording electrode layer 1 to realize high-resolution electrophysiological signal record...
Embodiment 2
[0094]The difference between this embodiment and embodiment 1 is:
[0095] In the preparation of the LED photostimulation layer 3, an ordinary double-sided polished silicon wafer is used as the substrate of the photoelectrode.
[0096] The design of the electromagnetic shielding layer 2 and the integration of the recording electrode layer 1 are the same as in the first embodiment.
[0097] In releasing the probe 5 , in step (6) front side deep reactive ion etching (DRIE) silicon on the front side of the substrate, and the etching depth is greater than the actual thickness of the probe 5 .
[0098] Steps (10) to (12) are replaced by: deep reactive ion etching (DRIE) silicon on the back, the etching depth is the thickness of the silicon wafer minus the actual thickness of the probe 5, and the contour lines of the front and back sides are opened through over-etching, The electrodes are thus released.
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