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Image sensor pixel structure

A technology of image sensor and pixel structure, which is applied in the directions of image communication, TV, color TV components, etc., can solve the problem that the performance of CMOS image sensor needs to be improved, and achieve the effect of good performance

Active Publication Date: 2020-10-09
BRIGATES MICROELECTRONICS KUNSHAN
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Problems solved by technology

[0004] However, the performance of existing CMOS image sensors still needs to be improved

Method used

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Embodiment Construction

[0040] Dynamic range is a very important index parameter of image sensor. The dynamic range refers to the range of the maximum light intensity and the minimum light intensity that the image sensor can simultaneously detect in the same image, generally expressed in dB. The specific formula is as follows:

[0041]

[0042] Among them, P max Indicates the maximum detectable light intensity, P max Indicates the minimum detectable light intensity. The dynamic range of a general image sensor is between 60-70dB, and the dynamic range of the human eye is between 100-120dB. High dynamic range image sensors are very important for maintaining the balance of details in the dark and details in the bright.

[0043] The full well capacity of an image sensor refers to the maximum number of electrons that can be collected and accommodated by the pixel structure. Large full well capacity can effectively improve the dynamic range of the image sensor. For a general linear response image ...

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Abstract

Provided is an image sensor pixel structure. The pixel structure comprises a photoelectric conversion circuit, a transmission circuit, a switching circuit, a reset circuit, a first capacitor and a charge discharge circuit, wherein the charge discharge circuit is coupled between the first capacitor and the power supply voltage output end, and is suitable for discharging charges overflowing from thefirst capacitor to the power supply voltage output end under the control of at least two second switch control signals; at least two second switch control signals have different control voltages. Byapplying the scheme, the performance of a CMOS image sensor can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an image sensor pixel structure. Background technique [0002] An image sensor is a semiconductor device that converts light signals into electrical signals. [0003] Image sensors are classified into complementary metal oxide (Complementary Metal Oxide Semiconductor, CMOS) image sensors and charge coupled device (Charge Coupled Device, CCD) image sensors. Among them, the CMOS image sensor has the advantages of simple process, easy integration of other devices, small size, light weight, low power consumption and low cost. Therefore, with the development of image sensing technology, CMOS image sensors are increasingly used in various electronic products instead of CCD image sensors. At present, CMOS image sensors have been widely used in still digital cameras, digital video cameras, medical imaging devices, and automotive imaging devices. [0004] However, the perform...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/355H04N5/374
CPCH04N25/59H04N25/76
Inventor 黄金德王林胡万景
Owner BRIGATES MICROELECTRONICS KUNSHAN