Unlock instant, AI-driven research and patent intelligence for your innovation.

Image Sensor Pixel Structure

A technology of image sensor and pixel structure, which is applied in the direction of image communication, TV, color TV parts, etc. It can solve the problems of CMOS image sensor performance that needs to be improved, and achieve the effect of good performance

Active Publication Date: 2022-06-21
BRIGATES MICROELECTRONICS KUNSHAN
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of existing CMOS image sensors still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Image Sensor Pixel Structure
  • Image Sensor Pixel Structure
  • Image Sensor Pixel Structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Dynamic range is an important parameter of image sensors. The dynamic range refers to the range of the maximum light intensity and the minimum light intensity that the image sensor can detect simultaneously in the same image, generally expressed in dB. The specific formula is as follows:

[0041]

[0042] Among them, P max Indicates the maximum detectable light intensity, P max Indicates the minimum detectable light intensity. The dynamic range of a general image sensor is between 60-70dB, and the dynamic range of the human eye is between 100-120dB. A high dynamic range image sensor is important for balancing details in the dark with details in the highlights.

[0043] The full well capacity of an image sensor refers to the maximum number of electrons that the pixel structure can collect and hold. The large full well capacity can effectively improve the dynamic range of the image sensor. For a general linear response image sensor, the maximum detectable saturat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An image sensor pixel structure. The pixel structure includes: a photoelectric conversion circuit, a transmission circuit, a switch circuit, a reset circuit, a first capacitor, and a charge discharge circuit; wherein: the charge discharge circuit is coupled to the first capacitor and the power supply voltage Between the output terminals, under the control of at least two second switch control signals, the charge overflowed by the first capacitor is discharged to the output terminal of the power supply voltage; the at least two second switch control signals have different the control voltage. Applying the above solution, the performance of the CMOS image sensor can be improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to an image sensor pixel structure. Background technique [0002] An image sensor is a semiconductor device that converts optical signals into electrical signals. [0003] Image sensors are classified into complementary metal oxide (Complementary Metal Oxide Semiconductor, CMOS) image sensors and charge coupled device (Charge Coupled Device, CCD) image sensors. Among them, the CMOS image sensor has the advantages of simple process, easy integration of other devices, small size, light weight, low power consumption and low cost. Therefore, with the development of image sensing technology, CMOS image sensors are increasingly used in various electronic products instead of CCD image sensors. At present, CMOS image sensors have been widely used in still digital cameras, digital video cameras, medical imaging devices, and automotive imaging devices. [0004] However, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/355H04N5/374
CPCH04N25/59H04N25/76
Inventor 黄金德王林胡万景
Owner BRIGATES MICROELECTRONICS KUNSHAN