Inductive coupling reactor and working method thereof
A technology of inductive coupling and working method, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as difficult adjustments, and achieve the effect of strengthening control capabilities
Pending Publication Date: 2020-10-13
上海邦芯半导体科技有限公司
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Problems solved by technology
For example, in general, the plasma density distributed over the central region of the wafer is greater than that distributed over the edge region of the wafer, and this distribution is difficult to adjust
Method used
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Embodiment Construction
[0033]As mentioned in the background, in the existing inductively coupled reactors, it is difficult to controllably adjust the distribution of the generated ions.
[0034] An inductively coupled reactor, reference figure 1 , including an inductively coupled plasma source, the inductively coupled plasma source includes a shield 1000, a reaction chamber dielectric tube 1001 located inside the shield 1000, a coil-shaped radio frequency antenna 1002 located on the side wall of the reaction chamber dielectric tube 1001, the The shape of the reaction chamber dielectric pipe 1001 is columnar, and the coil-shaped radio frequency antenna 1002 surrounds the reaction chamber dielectric pipe 1001 , and the position of the coil-shaped radio frequency antenna 1002 is fixed.
[0035] In the above-mentioned inductively coupled reactor, the gas is passed into the reaction chamber medium pipe 1001 from the inlet pipe 1003 at the top of the reaction chamber medium pipe 1001, and mixed in the col...
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The invention discloses an inductive coupling reactor and a working method thereof. The inductive coupling reactor comprises a reaction cavity main body and an inductively coupled plasma source positioned above the reaction cavity main body; the inductively coupled plasma source includes a first reaction medium chamber, a second reaction medium chamber located above the first reaction medium chamber, a lower radio frequency antenna and an upper radio frequency antenna; the bottom of the second reaction medium chamber is communicated with the middle area of the top of the first reaction mediumchamber; the bottom of the side wall of the second reaction medium chamber extends into the first reaction medium chamber; the height of the second reaction medium chamber is adjustable; the lower radio frequency antenna is positioned at the side part of the first reaction medium chamber; the upper radio frequency antenna is positioned at the side part of the second reaction medium chamber; and the radio frequency power fed by the upper radio frequency antenna and the radio frequency power fed by the lower radio frequency antenna are adjustable.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an inductively coupled reactor and a working method thereof. Background technique [0002] In semiconductor manufacturing, multiple processes are involved, and each process is completed by certain equipment and processes. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process uses the reactive gas to generate plasma after obtaining energy, which contains charged particles such as ions and electrons and highly chemically active neutral atoms, molecules and free radicals, and performs physical and chemical reactions on the etching object. etch. [0003] However, during the plasma etching process, the etching conditions at the edge of the wafer are quite different from those at the center of the wafer. The etching conditions include: plasma density distribution, radio frequency ...
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IPC IPC(8): H01L21/67H01J37/32
CPCH01L21/67069H01J37/321H01J37/3211H01J2237/327H01J2237/334
Inventor 吴堃
Owner 上海邦芯半导体科技有限公司