Inductive coupling reactor and working method thereof
A technology of inductive coupling and reactor, applied in semiconductor/solid-state device manufacturing, discharge tube, electrical components, etc., can solve problems such as difficult adjustment
Pending Publication Date: 2020-10-20
上海邦芯半导体科技有限公司
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Problems solved by technology
For example, in general, the plasma density distributed over the central region of the wafer is greater than that distributed over the edge region of the wafer, and this distribution is difficult to adjust
Method used
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Embodiment Construction
[0028] As mentioned in the background, in the existing inductively coupled reactors, it is difficult to controllably adjust the distribution of the generated ions.
[0029] An inductively coupled reactor, reference figure 1 , including an inductively coupled radio frequency unit, the inductively coupled radio frequency unit includes a shielding cover 1000, a reaction chamber dielectric tube 1001 located inside the shielding cover 1000, a coil-shaped radio frequency antenna 1002 located on the side wall of the reaction chamber dielectric tube 1001, the The shape of the reaction chamber dielectric pipe 1001 is columnar, and the coil-shaped radio frequency antenna 1002 surrounds the reaction chamber dielectric pipe 1001 , and the position of the coil-shaped radio frequency antenna 1002 is fixed.
[0030]In the above-mentioned inductively coupled reactor, the gas is passed into the reaction chamber medium pipe 1001 from the inlet pipe 1003 at the top of the reaction chamber medium...
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The invention discloses an inductive coupling reactor and a working method thereof. The inductive coupling reactor comprises a reaction cavity main body and an inductive coupling radio frequency unitarranged above the reaction cavity main body. The inductive coupling radio frequency unit comprises a shielding case, a reaction chamber medium pipe arranged in the shielding case, an upper radio frequency antenna and a lower radio frequency antenna; the side wall of the reaction chamber medium pipe is inclined, and the top cross section of the reaction chamber medium pipe is smaller than the bottom cross section of the reaction chamber medium pipe; the upper radio frequency antenna and the lower radio frequency antenna are arranged in the shielding case and distributed on the side portion ofthe reaction chamber medium pipe, the upper radio frequency antenna and the lower radio frequency antenna are separated from each other, and the radio frequency power fed by the upper radio frequencyantenna and the radio frequency power fed by the lower radio frequency antenna are respectively adjustable. The inductive coupling reactor can enhance the control capability of plasma distribution.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an inductively coupled reactor and a working method thereof. Background technique [0002] In semiconductor manufacturing, multiple processes are involved, and each process is completed by certain equipment and processes. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process uses the reactive gas to generate plasma after obtaining energy, which contains charged particles such as ions and electrons and highly chemically active neutral atoms, molecules and free radicals, and performs physical and chemical reactions on the etching object. etch. [0003] However, during the plasma etching process, the etching conditions at the edge of the wafer are quite different from those at the center of the wafer. The etching conditions include: plasma density distribution, radio frequency ...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L21/67H01J37/32
CPCH01J37/321H01J37/3211H01J2237/327H01J2237/334H01L21/67069
Inventor 吴堃杨猛
Owner 上海邦芯半导体科技有限公司