Inductively coupled plasma device

Abstract

An inductively coupled plasma device comprises a reaction chamber main body, and the top wall of the reaction chamber main body comprises a dielectric window; the device further comprises an inductance coil which is located at the top of the dielectric window, and a plurality of discrete magnetic elements located at the top of the dielectric window, wherein the magnetic elements are at least surrounded by a part of the inductance coil and are discrete from the inductance coil. The inductively coupled plasma device can adjust the plasma density indexing in the reaction chamber main body and is simple in structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an inductively coupled plasma device. Background technique [0002] In semiconductor manufacturing, multiple processes are involved, and each process is completed by certain equipment and processes. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process uses the reactive gas to generate plasma after obtaining energy, which contains charged particles such as ions and electrons and highly chemically active neutral atoms, molecules and free radicals, and performs physical and chemical reactions on the etching object. etch. [0003] However, during the plasma etching process, the etching conditions at the edge of the wafer are quite different from those at the center of the wafer. The etching conditions include: plasma density distribution, radio frequency electric field, temperatur...

AI Technical Summary

Problems solved by technology

For example, in general, the plasma density distributed over the central region of the wafer is greater than that distributed over the edge region of the wafer, and this distribution is difficult to adjust

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