Brushless motor controller power-on protection detection circuit and power-on protection detection method thereof
A brushless motor and detection circuit technology, which is applied in the direction of electronic commutation motor control, control system, measurement of current/voltage, etc., can solve the problems of easy burnout when power on, long detection and protection time, burnout of the controller, etc., and achieve The effect of avoiding burnout, speeding up protection time, and improving reliability and effectiveness
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Embodiment 1
[0026] figure 1 , figure 2 , image 3 , Figure 4In the illustrated embodiment, a power-on protection detection circuit for a brushless motor controller includes a controller main circuit for driving and controlling the three-phase winding of the brushless motor. The main circuit of the controller adopts a three-phase half-bridge circuit structure, and the control The main circuit of the device is composed of six FETs. The positive terminal of the power supply of the three-phase half-bridge circuit is electrically connected to the positive terminal of the 24V DC power input, and the negative terminal of the power supply of the three-phase half-bridge circuit is electrically connected to the negative terminal of the 24V DC power input. The gate network of the effect tube is respectively connected to the HO function pin and the LO function pin of the three pre-driver integrated chips. The three pre-driver integrated chips are powered by +15V power supply and charged by the bo...
Embodiment 2
[0028] figure 1 , figure 2 , image 3 , Figure 4 In the shown embodiment, a brushless motor controller power-on protection detection method includes the following protection monitoring steps:
[0029] A1. The MCU chip controls the three pre-area integrated chips to send a conduction pulse to the upper transistors of the three half-bridges of the first FET, the third FET and the fifth FET, and the upper transistor will be turned on for a short time. At this time, the bootstrap capacitor C5 will flow part of the leakage current to the first FET, the third FET and the fifth FET through the Vb function pin and the VS function pin of the pre-area integrated chip U1 through the bootstrap circuit. The source stages of the upper transistors of the three half-bridges, the source stages of the upper transistors of the three half-bridges are also the U, V, and W terminals of the winding; the three source terminals are due to the existence of their respective RC series circuits, The...
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