Method and device for implementing reverse programming based on flash memory

An implementation method and memory technology, which are applied in the field of reverse programming implementation methods and devices based on Flash memory, can solve problems such as inability to read data correctly, and achieve the goal of improving random write performance, reducing write restrictions, and improving write efficiency. Effect

Active Publication Date: 2021-07-27
SHENZHEN SANDIYIXIN ELECTRONICS CO LTD
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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a method and device for implementing reverse programming based on Flash memory, aiming at solving the problem that the programming of Nand Flash memory in the prior art can only be performed according to the order of addresses from large to small. When writing data in a physical block, if one of the physical blocks writes data in reverse order when writing data, the technical problem that the data cannot be read correctly

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  • Method and device for implementing reverse programming based on flash memory
  • Method and device for implementing reverse programming based on flash memory
  • Method and device for implementing reverse programming based on flash memory

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[0039] In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. Embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0040] An embodiment of the present invention provides a flash memory-based reverse programming implementation method. see figure 1 , figure 1 It is a flow chart of a preferred embodiment of a flash memory-based reverse programming implementation method of the present invention. like figure 1 As shown, it includes the steps:

[0041] Step S100, detecting the data writing instruction, and obtaining the data writing status;

[0042] Step S200, judging whether the data writing status is reverse order writing, if yes, execute step S300, if...

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Abstract

The invention discloses a method and device for realizing reverse programming based on Flash memory. The method includes: detecting a data writing instruction and obtaining the data writing status; judging whether the data writing status is reverse programming; if the data writing status is If it is written in reverse order, the data is written into the address-mapped reverse-order physical block, and the mapping relationship between the data and the address-mapped reverse-order physical block is saved in the block mapping table. The embodiment of the present invention improves the random write performance of the nand flash storage device based on the block management algorithm, especially for reverse order continuous write data, which can achieve the same performance as the sequential write, reducing the write limit of the nand flash storage device, Improve the writing efficiency of nand flash storage devices.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a flash memory-based reverse programming implementation method and device. Background technique [0002] Nand Flash memory is a kind of flash memory. It adopts nonlinear macro-cell mode inside, which provides a cheap and effective solution for the realization of solid-state large-capacity memory. Nand-flash memory has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data, so it has been more and more widely used in the industry. [0003] The current mainstream implementation methods of Nand Flash memory management algorithms are block management and page management algorithms. A memory has several physical blocks, and a physical block is provided with several physical pages. There are several physical partitions in a physical page. In the prior art, when programming Nand Flash memory, data can only be written...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/0607G06F3/064G06F3/0679
Inventor 曾庆聪张如宏杨晓生
Owner SHENZHEN SANDIYIXIN ELECTRONICS CO LTD
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