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Grinding method of irregular cadmium zinc telluride wafer

A cadmium zinc telluride wafer and a regular technology, applied in the field of detectors, can solve the problems of low efficiency and poor effect of the cadmium zinc telluride wafer, and achieve the effects of improving grinding efficiency, surface flatness and processing capacity.

Active Publication Date: 2022-06-28
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] The embodiment of the present invention provides a grinding method for an irregular CdZnTe wafer, which is used to solve the problem of low efficiency and poor effect of single-chip single-sided mechanical grinding of CdZnTe wafers in the prior art

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  • Grinding method of irregular cadmium zinc telluride wafer
  • Grinding method of irregular cadmium zinc telluride wafer
  • Grinding method of irregular cadmium zinc telluride wafer

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Embodiment Construction

[0053] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that the present invention will be more thoroughly understood, and will fully convey the scope of the present invention to those skilled in the art.

[0054] like figure 1 As shown, the grinding method of the irregular cadmium zinc telluride wafer according to the embodiment of the present invention includes:

[0055] S1, configure a polishing liquid, and introduce the polishing liquid into a double-sided polishing machine for polishing an irregular cadmium zinc telluride wafer.

[0056] The polishing liquid can be in contact with the irregular cadmium zinc telluride wafer, a...

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Abstract

The invention discloses a grinding method of an irregular cadmium zinc telluride wafer. The grinding method of the irregular cadmium zinc telluride wafer comprises: configuring a grinding fluid, and introducing the grinding fluid into a double-sided grinding machine for grinding the irregular cadmium zinc telluride wafer wafer; at least one irregular cadmium zinc telluride wafer is evenly arranged on at least one cruiser sheet between the upper grinding disc and the lower grinding disc of the double-sided grinding machine; the equipment parameters of the double-sided grinding machine are set, and the double-sided grinding machine is started. In order to realize the double-sided grinding of at least one irregular CdZnTe wafer. With the present invention, multiple irregular CdZnTe wafers can be ground on both sides at the same time, which greatly improves the grinding efficiency of the irregular CdZnTe wafers, and can effectively solve the problem of edge chipping caused by the impact of the irregular CdZnTe wafers in a free state And the problem of splinter, the surface flatness and processing capacity of the CdZnTe wafer after grinding have been greatly improved.

Description

technical field [0001] The invention relates to the technical field of detectors, in particular to a grinding method of irregular cadmium zinc telluride wafers. Background technique [0002] Cadmium zinc telluride (CdZnTe) substrate is the best substrate material for liquid phase epitaxy of mercury cadmium telluride (HgCdTe) thin films. High-quality CdZnTe wafer surface processing is of particular importance for device performance. The uneven thickness of CdZnTe wafers will directly affect the uniformity of subsequent epitaxial HgCdTe films. Therefore, it is necessary to reduce the TTV value of the wafer as much as possible to obtain a substrate surface with high flatness. However, after directional cutting of CdZnTe crystals, the resulting wafers are irregular in shape, with many knife marks and scratches left on the surface of the wafers, which are not flat enough. In order to eliminate these surface defects, grinding must be carried out. In the related art, single-chip...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/08B24B37/10B24B37/28B24B37/34B24B57/04
CPCB24B37/08B24B37/107B24B37/28B24B37/34B24B57/04
Inventor 侯晓敏刘江高李轩刘铭徐强强吴卿
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP