System-level reinforcement method and circuit for high-voltage diodes used in aerospace against single-event burning

A high-voltage diode, anti-single event technology, applied in the direction of utilizing plasma, control/regulation system, high-efficiency power electronic conversion, etc., can solve the limitation of SiCSBD device aerospace application pace, device power loss and reverse recovery time increase, reinforcement means Insufficient and other problems, to achieve the effect of improving the anti-single event burnout voltage level, reducing the possibility of device failure, and making the process implementation less difficult

Active Publication Date: 2022-02-18
XIDIAN UNIV
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  • Application Information

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Problems solved by technology

However, due to the unclear mechanism of single particle action and the lack of existing reinforcement methods, some international research institutions have announced that they have abandoned the research plan on SiC SBD anti-radiation reinforcement, which severely limits the pace of aerospace applications of SiC SBD devices.
[0007] At present, the anti-single event burning ability of domestic devices is insufficient and cannot meet the application requirements
The usual practice is to increase the actual withstand voltage value of the high-voltage fast recovery rectifier diode (increase the resistance of the drift region and the thickness of the drift region) to increase its anti-single event burnout voltage level; but this method will sacrifice the electrical performance of the device, making the device The forward and reverse recovery characteristics of the device deteriorate, resulting in increased power loss and reverse recovery time of the device, which adversely affects the overall performance of the aerospace system

Method used

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  • System-level reinforcement method and circuit for high-voltage diodes used in aerospace against single-event burning
  • System-level reinforcement method and circuit for high-voltage diodes used in aerospace against single-event burning
  • System-level reinforcement method and circuit for high-voltage diodes used in aerospace against single-event burning

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Embodiment Construction

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0032] Such as figure 1 The diode series structure shown in this embodiment can be used for system-level reinforcement of high-voltage diodes against single event burning.

[0033] Typical application scenarios of the system-level hardening method proposed in this embodiment are as follows:

[0034] As an advanced propulsion technology, electric propulsion has become an important indicator to measure the advanced nature of a satellite due to its advantages of high specific impulse, which can reduce the quality of the spacecraft system, improve the service life and increase the payload. figure 2 It is a schematic diagram of the composition of the electric propulsion system, which consists of four parts: thruster, power processing unit (Power Processing Unit, PPU), propellant supply system (Xenon Feed System, XFS) and digital control and inter...

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Abstract

The invention provides a system-level reinforcement method and circuit for high-voltage diodes used in aerospace to resist single-event burning, aiming at realizing the high-voltage diode anti-single-event burning reinforcement design more simply and at low cost, and providing component protection for aerospace systems. This method is aimed at multiple high-voltage fast recovery rectifier diodes D used in aerospace systems. i , each high voltage fast recovery rectifier diode D i Replace it with at least two high-voltage fast-recovery rectifier diodes in series with the same specification; correspondingly, for the screen-grid power output rectifier filter circuit, the original high-voltage fast-recovery rectifier diode D 1 、D 2 、D 3 、D 4 Constitute a bridge rectifier circuit, high voltage fast recovery rectifier diode D 5 、D 6 As the clamping diode and the freewheeling diode in the CDD snubber network, they are replaced by at least two high-voltage fast-recovery rectifier diodes in series with the same specification. The invention has the advantages of simple and convenient realization, low process implementation difficulty, low cost and high application value.

Description

technical field [0001] The invention belongs to the field of single-event effect research, and relates to a system-level reinforcement method and circuit of a high-voltage diode used in aerospace to resist single-event burning. Background technique [0002] The spacecraft works in the space irradiation environment, and the space irradiation effect will cause the performance degradation or even failure of electronic devices, which will endanger the long-term continuous and stable working performance of the spacecraft in orbit. Space radiation effects of electronic devices include single event effects, ionization total dose effects, and displacement damage effects. Among them, high-voltage diodes are very easy to cause single event burnout (Single Event Burnout, SEB) resulting in device failure. [0003] High-voltage fast recovery rectifier diodes are used in aerospace systems, mainly for rectification and freewheeling of the secondary power supply. Once a single event burns ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/335F03H1/00
CPCH02M3/33569F03H1/0006H02M1/0058Y02B70/10
Inventor 刘毅廖新芳李静杨银堂
Owner XIDIAN UNIV
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