Ferroelectric memory cell access

Abstract

The invention relates to ferroelectric memory cell access. In some examples, during a first portion of an access procedure, the voltages of a digit line and word line coupled with the memory cell maybe increased while the voltage of a plate coupled with the memory cell is held constant, which may support sensing a logic state stored by the memory cell prior the access procedure, and which may result in a first logic state being written to the memory cell. A voltage of the plate may then be increased, and the digit line may then be coupled with the plate. Because the first logic state was previously written to the memory cell, a target logic state may not need to be subsequently written to the memory cell unless different than the first logic state.

Description

[0001] cross reference [0002] This patent application asserts U.S. Patent Application Serial No. 16 / 511,423, filed July 15, 2019, by Di Vincenzo, entitled "FERROELECTRIC MEMORY CELL ACCESS" No. , assigned to the present assignee and expressly incorporated herein by reference in its entirety. technical field [0003] The technical field relates to ferroelectric memory cell access. Background technique [0004] The following generally relates to systems including at least one memory device and more specifically to ferroelectric memory cell access. [0005] Memory devices are widely used to store information in a variety of electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, binary devices most commonly store one of two states, usually represented by a logical one or a logical zero. In other devices, more than two states may ...

AI Technical Summary

Problems solved by technology

FeRAM may be able to achieve densities similar to volatile memory, but may have non-volatile properties due to the use of ferroelectric capacitors as storage devices

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