Giant magnetoresistive sensor with integrated annealed structure
A giant magnetoresistive sensor and sensor technology, applied in the direction of instruments, measuring magnetic variables, single equipment manufacturing, etc., can solve the problems of low precision, difficult industrial mass production, low efficiency, etc.
Active Publication Date: 2022-04-29
INST OF SENSOR TECH GANSU ACAD OF SCI
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[0015] We can see that both the local laser annealing process and the multi-step photolithography process have the disadvantages of low precision and low efficiency, especially difficult to achieve in industrial mass production.
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[0074] The invention discloses a GMR structure integrated with an annealing structure and a Wheatstone full-bridge GMR sensor composed of the GMR structure. The integrated annealing structure can realize the annealing of the GMR structure, making its temperature reach its blocking temperature or even higher. Under the external annealing magnetic field, the magnetization direction Mp of the pinned layer in the GMR structure is adjusted to be consistent with the external annealing magnetic field and fix it. In some examples, the GMR structure is divided into multiple groups according to whether the Mp is the same or not, those with the same Mp are one group, and those with different Mp are different groups. This integrated annealing structure can realize the annealing of different GMR structure groups in external magnetic fields in different directions. In particular, this integrated annealing structure can independently anneal the corresponding GMR structure, so as to adjust t...
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Abstract
The invention discloses a giant magnetoresistance sensor with an integrated annealing structure. The sensor includes: a first group of GMR structures, and the first group of GMR structures further includes: a substrate, an annealed structure deposited on the substrate and covered by an insulating layer, and a multilayer film structure, the multilayer film includes: a substrate with a fixed magnetization direction Pinned layer, a free layer whose magnetization direction changes with the external magnetic field, a non-magnetic layer sandwiched between the pinned layer and the free layer; the second group of GMR structures: the substrate on which the first group of GMR structures has been deposited is deposited on An annealed structure covered by an insulating layer on a substrate, a multilayer film structure. The pinning direction of the first set of GMR structures is different from the pinning direction of the second set of GMR structures. The invention is a novel and effective GMR structure integrated with an annealing structure, which can realize GMR structures with different magnetization directions in one GMR sensor, and use the structure to form a GMR sensor with a Wheatstone full-bridge structure.
Description
technical field [0001] The invention relates to a giant magnetoresistance sensor, in particular to a giant magnetoresistance sensor with an integrated annealing structure. Background technique [0002] Giant magnetoresistance (GMR, Giant MagnetoResistance) sensors are widely used and are currently one of the most promising magnetic sensors. The GMR sensor core structure consists of a "sandwich" structure consisting of two ferromagnetic layers sandwiching a non-ferromagnetic layer. Such as figure 1 As shown, the GMR sensor (10) comprises ferromagnetic layers (first ferromagnetic layer 12 and second ferromagnetic layer 16) with an intermediate non-ferromagnetic layer (14). The main components of the ferromagnetic layers (the first ferromagnetic layer 12 and the second ferromagnetic layer 16 ) can be NiFe, CoFe or other suitable magnetic materials. The main components of the non-ferromagnetic layer (14) can be Cu, MgO, Al 2 o 3 or other suitable non-magnetic material. The...
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IPC IPC(8): G01R33/09G01R33/00
CPCG01R33/093G01R33/0052
Inventor 韩根亮宋玉哲张彪
Owner INST OF SENSOR TECH GANSU ACAD OF SCI