Forming method of semiconductor device

Abstract

The invention provides a forming method of a semiconductor device. According to the method, the etching time of a first etching process is firstly obtained, and the etching rate is accurately obtainedaccording to the etching time of the first etching process and the total thickness of a second gate insulating layer and a side wall layer positioned on the second gate insulating layer; therefore, the etching rate of the etching machine can be tested without shutdown, the etching time of the second etching process can be effectively obtained according to the etching rate and the thickness of thepart, needing to be removed, in the remaining first gate insulating layer, and when the second etching process is executed, the etching time of the second etching process can be accurately controlled, and the thickness of the first gate insulating layer can be reduced to the target thickness, and the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] Semiconductor devices such as Metal-Oxide-Semiconductor Field-Effect Transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) generally include a substrate, a gate on the substrate, and a gate between the gate and the substrate. The gate insulating layer, and the gate spacer located on the sidewall of the gate, wherein the gate insulating layer can isolate the gate from the substrate, and the spacer can protect the gate on the one hand , On the other hand, it can prevent the large dose of source and drain implants from being too close to the conductive channel so that the conduction between source and drain may occur. Usually, there is a certain requirement on the thickness of the gate insulating layer, so that the gate insulating layer has good isolation performance. I...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for forming a semiconductor device to solve the problem that the existing method for forming a semiconductor device cannot effectively obtain the etching rate, resulting in the problem that the thickness of the gate insulating layer cannot reach the target thickness

[0006] Another object of the present invention is to solve the problem that the etching machine needs to be stopped when adjusting the etching time of the gate oxide layer in the existing method for forming a semiconductor device.

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