Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for preparing high-precision silver electrodes by sidewall protection process

A sidewall protection, high-precision technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of large AgCDloss, poor aluminum conductivity, poor surface flatness, etc., and achieve the effect of reducing CDloss.

Active Publication Date: 2022-06-07
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Since the reflectivity of Ag is as high as 98%, it is widely used in top-emitting organic light-emitting diode devices, but because silver (Ag) can only use wet etching process, the CD loss is large (>1μm), so the Ag electrode structure cannot be applied To ultra-high resolution displays such as silicon-based microscopes and digital micromirror devices (DMDs)
At present, ultra-high resolution displays mainly use aluminum (Al) electrodes, but the reflectivity of aluminum is low (-91%), and Al is easy to cause hillocks and pits due to stress concentration and release during the annealing process, and the surface is even. Poor; aluminum has poor conductivity and severe electromigration, especially the resistance becomes larger and larger as the pixel size becomes smaller, electromigration becomes more and more serious, and electrical reliability deteriorates
Ag does not have the problem of poor surface flatness caused by stress changes, and Ag has good conductivity, so the development of high-precision, high reflectivity, and high-conductivity silver electrodes is very meaningful for ultra-high resolution displays.
[0003] At present, the Ag electrode mainly uses the ITO / Ag / ITO structure, and the nitrification mixed acid (nitric acid, phosphoric acid, acetic acid) one-step etching process, the nitrification mixed acid ITO etching rate is slow, the Ag etching rate is fast, and the etching time is long when etching the lower layer ITO. Will lead to a large Ag CDloss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing high-precision silver electrodes by sidewall protection process
  • A method for preparing high-precision silver electrodes by sidewall protection process
  • A method for preparing high-precision silver electrodes by sidewall protection process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for preparing high-precision silver electrodes by sidewall protection process, comprising the following steps:

[0035] 1), ITO / Ag / ITO structure is a three-layer sandwich structure, from bottom to top for ITO layer, Ag layer and ITO layer, and its thickness is 100A, 1000A, 100A from bottom to top; Lithography is carried out first, PR thickness is 1μm, curing energy is 50mj;

[0036] 2), then for the upper LAYER ITO that is not protected by photoresist, 8wt% oxalic acid etching is used, the upper ITO is removed in 20s, and then the Ag layer is hyged with nitric acid / phosphoric acid / acetate mixture for 10s to remove the Ag layer; The nitric acid / phosphoric acid / acetic acid mixture used has a mass fraction ratio of 20%:40%:40%.

[0037] 3) Perform C again 4 F 8 Deposition passivation layer, process parameters: time 10s, power supply power 300W, C 4 F 8Flow rate 10sccm, pressure 5mt, temperature 50 °C; The protective polymer used to form the sidewall is deposited C on ...

Embodiment 2

[0043] A method for preparing high-precision silver electrodes by sidewall protection process, comprising the following steps:

[0044] 1), ITO / Ag / ITO structure is a three-layer sandwich structure, and its thickness is 500A, 5000A, 500A; Perform lithography, PR thickness 2 μm, curing energy 500 mj;

[0045] 2), the position that is not protected by the photoresist removes the upper ITO, and the 4wt% oxalic acid wet engraving 50s is used to remove the upper ITO; Then carry out Ag wet etching, nitric acid / phosphoric acid / acetate mixture wet engraving 20s, remove the Ag layer; The mass-to-fraction ratio of nitric / phosphate / acetate mixture is 30%:30%:40%.

[0046] 3)、C 4 F 8Deposition passivation layer, process parameters: time 30s, power supply power 500W, C 4 F 8 Flow rate 20sccm, pressure 10mt, temperature 50 °C. C is deposited on the surface of the photoresist and on the surface of the ITO below the exposed Ag surface area 4 F 8 Passivation layer, deposition C 4 F 8 Used to fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a high-precision silver electrode by a sidewall protection process, utilizing the sidewall protection mechanism of the Bosch process and the undercut morphology after Ag wet etching, after Ag etching, the Bosch process C 4 f 8 Deposit passivation polymer, then SF 6 The bottom and top polymers are etched, and the sidewall passivation layer polymer is retained as a protective layer to protect Ag from being etched when the bottom ITO is etched, thereby reducing CD loss. Using the Bosch sidewall protection etching process, the CD loss can be reduced from >1um in one-step wet etching to less than 0.1um, meeting the needs of ultra-high resolution display.

Description

Technical field [0001] The present invention belongs to the silicon-based Micro OLED microdisplay field, specifically relates to a sidewall protection process to prepare a method of preparing a high-precision silver electrode. Background [0002] Because the Ag reflectivity is as high as 98%, it is widely used in top emission organic light-emitting diode devices, but because silver (Ag) can only use wet etching process, CD loss is large (> 1 μm), so the Ag electrode structure can not be applied to silicon-based micro-imaging, digital micromirror devices (DMD) and other ultra-high-resolution displays. At present, ultra-high resolution displays mainly use aluminum (Al) electrodes, but aluminum reflectivity is low (-91%), and Al is easy to cause spikes (hillocks) and pits due to stress concentration and release in the annealing process, and the surface flatness is poor; Aluminum has poor electrical conductivity and serious electromigration, especially as the resistance of pixels ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01B13/00
CPCH01B13/00H10K71/00
Inventor 吕迅刘胜芳刘晓佳王志超
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com