Method for preparing high-precision silver electrode by side wall protection process

A sidewall protection, high-precision technology, applied in circuits, electrical components, electrical solid-state devices, etc., can solve the problems of inability to apply Ag electrode structure, large AgCDloss, poor aluminum conductivity, etc., to meet the needs of ultra-high-resolution display , The effect of reducing CDloss

Active Publication Date: 2021-02-12
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Since the reflectivity of Ag is as high as 98%, it is widely used in top-emitting organic light-emitting diode devices, but because silver (Ag) can only use wet etching process, the CD loss is large (>1μm), so the Ag electrode structure cannot be applied To ultra-high resolution displays such as silicon-based microscopes and digital micromirror devices (DMDs)
At present, ultra-high resolution displays mainly use aluminum (Al) electrodes, but the reflectivity of aluminum is low (-91%), and Al is easy to cause hillocks and pits due to stress concentration and release during the annealing process, and the surface is even. Poor; aluminum has poor conductivity and severe electromigration, especially the resistance becomes larger and

Method used

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  • Method for preparing high-precision silver electrode by side wall protection process
  • Method for preparing high-precision silver electrode by side wall protection process
  • Method for preparing high-precision silver electrode by side wall protection process

Examples

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[0033]Example 1

[0034]A method for preparing high-precision silver electrodes by a sidewall protection process includes the following steps:

[0035]1) The ITO / Ag / ITO structure is a three-layer sandwich structure. From bottom to top, there are ITO layer, Ag layer and ITO layer. The thickness is 100A, 1000A, and 100A from bottom to top; first, perform photolithography, PR Thickness 1μm, curing energy 50mj;

[0036]2) Then wet etching the upper ITO that is not protected by the photoresist, using 8wt% oxalic acid to etch, removing the upper ITO for 20s, and then wet etching the Ag layer with a mixture of nitric acid / phosphoric acid / acetic acid for 10s to remove the Ag layer; The ratio of mass fraction of nitric acid / phosphoric acid / acetic acid mixture is 20%:40%:40%.

[0037]3), then proceed to C4F8Passivation layer is deposited, process parameters: time 10s, power 300W, C4F8Flow rate 10sccm, pressure 5mt, temperature 50℃; used to form sidewall protection polymer on the photoresist surface, the ...

Example Embodiment

[0042]Example 2

[0043]A method for preparing high-precision silver electrodes by a sidewall protection process includes the following steps:

[0044]1) The ITO / Ag / ITO structure is a three-layer sandwich structure, with thicknesses of 500A, 5000A, and 500A in sequence; for photolithography, the PR thickness is 2μm, and the curing energy is 500mj;

[0045]2) Remove the upper ITO at the position not protected by the photoresist, and use 4wt% oxalic acid wet etching for 50s to remove the upper ITO; then perform Ag wet etching, wet etching with nitric acid / phosphoric acid / acetic acid mixture for 20s to remove the Ag layer; The nitric acid / phosphoric acid / acetic acid mixed acid used has a mass fraction ratio of 30%:30%:40%.

[0046]3), C4F8Passivation layer deposition, process parameters: time 30s, power supply power 500W, C4F8The flow rate is 20sccm, the pressure is 10mt, and the temperature is 50°C. C is deposited on the photoresist surface and the exposed Ag surface area on the lower ITO surface...

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Abstract

The invention provides a method for preparing a high-precision silver electrode by a side wall protection process, which utilizes a side wall protection mechanism of a Bosch process and undercut morphology after Ag wet etching, deposits a passivation polymer by the Bosch process C4F8 after Ag etching, etches polymers at the bottom and the top by SF6, reserves a side wall passivation layer polymeras a protection layer, and protects Ag from being etched during bottom ITO etching so as to reduce CD loss. By using the Bosch side wall protection etching process, the CD loss can be reduced from more than 1 micron of one-step wet etching to less than 0.1 micron, and the ultra-high resolution display requirement is met.

Description

technical field [0001] The invention belongs to the field of silicon-based Micro OLED microdisplays, and in particular relates to a method for preparing a high-precision silver electrode by a side wall protection process. Background technique [0002] Since the reflectivity of Ag is as high as 98%, it is widely used in top-emitting organic light-emitting diode devices, but because silver (Ag) can only use wet etching process, the CD loss is large (>1μm), so the Ag electrode structure cannot be applied To ultra-high resolution displays such as silicon-based microscopes and digital micromirror devices (DMDs). At present, ultra-high resolution displays mainly use aluminum (Al) electrodes, but the reflectivity of aluminum is low (-91%), and Al is easy to cause hillocks and pits due to stress concentration and release during the annealing process, and the surface is even. Poor; aluminum has poor conductivity and severe electromigration, especially the resistance becomes large...

Claims

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Application Information

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IPC IPC(8): H01B13/00H01L51/56
CPCH01B13/00H10K71/00
Inventor 吕迅刘胜芳刘晓佳王志超
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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