NANDFlash LUN self-organized read voltage sequence method
A technology for reading voltage and sequence, applied in the field of storage, can solve the problem that the voltage sequence cannot effectively correct errors, and achieve the effect of reducing the error rate of read operations, improving efficiency and reducing the number of read errors
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022] LUN is the smallest unit for executing operation instructions and reporting execution status in NAND Flash. Each LUN includes many blocks. Blocks in the same LUN have basically the same characteristics, that is, blocks in the same LUN can use the voltage value sequence searched by other blocks. .
[0023] When each influencing factor reaches a certain step threshold, a voltage value sequence search should be performed. The number of influencing factors determines the number of voltage value sequences, and the step threshold of the influencing factors determines the granularity of the voltage value sequence. Typical factors affecting NAND include wear times (PE Cycle), data retention time (Data Retention), temperature difference (Temperature Diff), read disturbance (Read Disturb), dwell time (Dwell Time), etc., and can also be added according to actual needs or delete.
[0024] When the block status inspection in NAND finds that the first block in a certain LUN is close...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More - R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com



