Data reading method and computer readable storage equipment

A data reading and data storage technology, applied in the field of memory, can solve the problems such as the decrease in the reading speed of flash memory devices and shorten the lifespan, and achieve the effect of avoiding the degradation of read performance, solving the shortening of lifespan, and improving the lifespan of flash memory.

Pending Publication Date: 2021-03-19
合肥康芯威存储技术有限公司
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Problems solved by technology

[0003] The purpose of the present invention is to provide a data reading method, which solves the problem that the reading speed of the flash memory device decreases and the life span is shortened in the later stage of use, effectively improves the read performance of the flash memory device, and improves the service life of the flash memory device

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  • Data reading method and computer readable storage equipment
  • Data reading method and computer readable storage equipment
  • Data reading method and computer readable storage equipment

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0029] see Figure 3 to Figure 5 , NAND flash memory products include MLC (multi-level cell) flash memory and TLC (Triple Level Cell) flash memory, etc. MLC (multi-level cell) flash memory refers to storing 2 bits (bit) in a storage unit 400 (cell) The data includes 2 data storage locations 401, and the TLC flash memory refers to storing 3 bits of data in 1 storage unit 400, which includes 3 data storage locations 401. TLC flash memory is slower than MLC flash memo...

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Abstract

The invention discloses a data reading method and computer readable storage equipment, and the method comprises the following steps: providing a storage unit which comprises a plurality of data storage positions, wherein a reading retry table is configured on the storage unit, and the reading retry table comprises a plurality of rereading steps which are arranged in sequence; requesting to read the data on the data storage position; and if the read data is correct, outputting the read data, and if the read data is incorrect, executing a rereading mechanism by adopting a rereading step until the rereading is successful, outputting the reread data, and when the reading over-limit parameters of the rereading steps corresponding to all successful rereading are greater than a preset threshold value, executing a data storage position abandoning mechanism. According to the invention, the read performance of the flash memory device is effectively improved, and the service life of the flash memory device is prolonged.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to a data reading method and a computer-readable storage device. Background technique [0002] As the capacity of the required flash memory device increases, the flash memory device also needs better and better error correction quality, and various flash memory device suppliers that match it will also provide a read retry table for the voltage of the flash memory device when reading Offset adjustment to read the data more accurately. As the capacity of the flash memory device increases, the number of groups of the read retry table provided by the flash memory device supplier also increases accordingly. During the read retry process, if you start from the 0th group of the read retry table every time, it will consume a lot of time for reading and error correction, resulting in low overall read performance, and even with the wear and tear of time, the connection may be lost...

Claims

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Application Information

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IPC IPC(8): G11C16/34G11C16/26G11C29/42G11C29/00
CPCG11C16/3495G11C16/26G11C29/42G11C29/883
Inventor 周民伟苏忠益
Owner 合肥康芯威存储技术有限公司
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