Interconnect structure
An interconnection structure, wire technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problems of misalignment of metal lines, increased leakage current resistivity, and increased IC processing and manufacturing complexity.
Inactive Publication Date: 2021-03-19
TAIWAN SEMICON MFG CO LTD
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Problems solved by technology
[0003] This scaling down process also increases the complexity of IC processing and manufacturing, and similar developments in IC processing and manufacturing are required for these advances to be realized.
For example, when interconnect structures are formed with metal lines and contact vias, the contact vias may be misaligned with the metal lines, resulting in increased leakage or resistivity
Thus, while existing interconnect structures and methods are generally adequate for their intended purposes, they are not entirely satisfactory in all respects
Method used
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[0049] The following disclosure provides many different embodiments, or examples, for implementing different elements of the disclosure. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are only examples and are not intended to be limiting. For example, if the disclosure describes that a first component is formed on (over) or on (on) a second component, it means that it may include the implementation that the first component is in direct contact with the second component. For example, embodiments in which an additional component is formed between the first component and the second component such that the first component and the second component may not be in direct contact may also be included.
[0050] In addition, the present disclosure may reuse the same reference signs and / or signs in different examples. These repetitions are for simplicity and clarity and are...
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Abstract
The invention relates to interconnect structures and methods of forming the same. An interconnect structure according to the present disclosure includes a conductive line feature over a substrate, a conductive etch stop layer over the conductive line feature, a contact via over the conductive etch stop layer, and a barrier layer disposed along a sidewall of the conductive line feature, a sidewallof the conductive etch stop layer, and a sidewall of the contact via.
Description
technical field [0001] Embodiments of the present invention relate to a self-aligned via structure, in particular to a self-aligned via structure and a method for forming the same. Background technique [0002] The integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC development, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the ability to create The smallest component (or line)). This scaling down process typically provides benefits through increased production efficiency and lower associated costs. [0003] This scaling down of the process also increases the complexity of IC processing and manufacturing, and similar developments in IC processing and manufacturing are required for these advances to ...
Claims
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IPC IPC(8): H01L23/528H01L21/768
CPCH01L23/528H01L21/76897H01L21/76838H01L2221/1068H01L21/76885H01L21/76834H01L23/53252H01L23/5226H01L23/53266H01L23/53238H01L21/76816H01L23/53209H01L21/7685H01L21/76843H01L23/53223H01L21/76829H01L21/76802H01L24/32H01L24/37H01L2924/181
Inventor 吴杰翰蔡政勳吕志伟李忠儒
Owner TAIWAN SEMICON MFG CO LTD