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Flash storage error detection method and circuit, storage medium and terminal

A technology for storing errors and circuits, which is applied in the field of flash detection, can solve problems such as slow operation efficiency, and achieve the effects of improving yield rate, reducing production cost, and improving detection efficiency

Pending Publication Date: 2021-03-23
XTX TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method, circuit, storage medium and terminal for detecting errors in flash storage, aiming to solve the problem that the existing flash needs to write data in the whole chip when performing redundant replacement, and then read the data in the whole chip for comparison The method leads to slow operation efficiency and is not suitable for CP testing

Method used

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  • Flash storage error detection method and circuit, storage medium and terminal
  • Flash storage error detection method and circuit, storage medium and terminal
  • Flash storage error detection method and circuit, storage medium and terminal

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Embodiment Construction

[0032] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0033] It should ...

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Abstract

The invention discloses a flash storage error detection method and circuit, a storage medium and a terminal, a special configuration signal is adopted in a CP test mode, a flash to be tested can use anormal write instruction to write fixed data in the test mode, data is read and compared at the same time through a read instruction in the test mode, and a mark signal of a comparison result is output. Meanwhile, wrong addresses are stored, and a damaged area can be replaced with a redundant storage area when the flash to be tested is powered on next time, the whole flash to be tested does not need to be written in and then read out, the storage area which cannot be erased in the chip can be determined while testing is conducted, the detection efficiency of flash storage errors is greatly improved, and redundancy replacement is achieved, by adopting the scheme, the flash yield can be effectively improved, the production cost is reduced, and the chip which cannot be erased and the storagearea which cannot be erased in the chip can be quickly detected in the CP test stage.

Description

technical field [0001] The invention relates to the technical field of flash detection, in particular to a method, circuit, storage medium and terminal for detecting errors in flash storage. Background technique [0002] Because the domestic flash technology is not perfect, when the flash leaves the factory, there is a certain probability that some storage area circuits of the flash cannot be erased successfully. In order to improve the yield and reliability of the flash, the redundant storage area (redundance ) to replace the area that cannot be erased successfully. [0003] But before the replacement, it is necessary to detect the location of the area that cannot be erased by the flash. The traditional method is to erase the entire flash, and then read the data of the entire flash, and then compare the data to determine the address of the wrong data, and then Know the location of the area that cannot be erased by the flash, and then use the redundant storage area (redunda...

Claims

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Application Information

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IPC IPC(8): G11C29/00G11C29/44
CPCG11C29/006G11C29/4401
Inventor 刘佳庆黎永健蒋双泉
Owner XTX TECH INC
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