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A processing method for high aspect ratio structures of hard and brittle materials and its application in the preparation of optical micro-nano structures

A high aspect ratio structure and processing method technology, applied in metal processing equipment, welding equipment, manufacturing tools, etc., can solve problems such as hindering etching, and achieve high smoothness, material removal, and high precision.

Active Publication Date: 2022-02-08
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On this basis, the etchant can fully etch the laser modified area, thus solving the problem of non-damage due to the competition between surface and internal damage when the femtosecond laser processes high-aspect-ratio micro-nano structures in hard and brittle materials. The problem of area hindering etch

Method used

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  • A processing method for high aspect ratio structures of hard and brittle materials and its application in the preparation of optical micro-nano structures
  • A processing method for high aspect ratio structures of hard and brittle materials and its application in the preparation of optical micro-nano structures
  • A processing method for high aspect ratio structures of hard and brittle materials and its application in the preparation of optical micro-nano structures

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Experimental program
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Effect test

Embodiment 1

[0032] Depend on figure 1 As shown, the 343nm femtosecond laser emitted by the laser passes through the quartz first concave lens L sequentially 1 and the second convex lens L 2 Beam expansion; then the beam reaches the objective lens O through the total reflection mirror M; in addition, the mercury lamp light source passes through the processed sample, the focusing ring objective lens O, the total reflection mirror M, and then passes through the third convex lens L 3 to the image sensor CCD.

[0033] A processing method for a high aspect ratio structure of a hard and brittle material, the specific steps are as follows:

[0034] Step 1: Preparation of samples to be processed;

[0035]First, silicon dioxide was sputtered on the surface of the sapphire sample by magnetron sputtering at a substrate temperature of 250°C, a radio frequency power of 2KW, and a sputtering pressure of 0.5Pa. The thickness of the silicon dioxide was 3m, and the thickness of the sapphire substrate wa...

Embodiment 2

[0043] Subwavelength antireflection structures were fabricated on sapphire surfaces by etching-assisted femtosecond laser modification with a sacrificial layer.

[0044] The cleaned sapphire sample was dry-etched using an ICP etching system (ICP-100A, TAILONG ELECTRONICS). For the sapphire material, the etching gas was a mixture of chlorine and boron trichloride. The parameters of ICP etching are set as follows: the upper electrode power of the ICP etching system is 600W, and the lower electrode power is 300W. The etching gas is a mixed gas of chlorine gas and boron trichloride, and the gas flow rates are respectively 20 sccm of chlorine gas and 30 sccm of boron trichloride. After dry etching for 50 minutes, a pyramid-like structure with good surface quality is formed, which has a sub-wavelength anti-reflection effect, and realizes the preparation of a sub-wavelength anti-reflection structure on the surface of sapphire.

[0045] Depend on Figure 5 It can be seen that the su...

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Abstract

The invention discloses a processing method for a high aspect ratio structure of a hard and brittle material and its application in preparing an optical micro-nano structure, which belongs to the technical field of laser micro-nano processing. The method of the invention first introduces a layer sacrificial layer, and then use the femtosecond laser to scan the laser modification from the inside to the surface, and combine the etching process to remove the laser modified area and the sacrificial layer together, so that the material surface has a high aspect ratio micro Preparation of nanostructures. The invention introduces a sacrificial layer on the surface of the material, distributes the undamaged area due to the competition of surface and internal damage to the sacrificial layer with a suitable thickness, and uses the etching process to remove the sacrificial layer, thereby effectively avoiding the damage in the material to be processed. Produces undamaged areas. On this basis, the etchant can fully etch the laser modified area, thus solving the problem that the undamaged area hinders etching due to the competition between surface and internal damage.

Description

technical field [0001] The invention belongs to the technical field of laser micro-nano processing, and specifically relates to the etching-assisted femtosecond laser modification technology with a sacrificial layer to realize the preparation of a micro-nano structure with a high aspect ratio of a hard and brittle material. Laser modification treatment is carried out from the inside to the surface, combined with the etching process to remove the sacrificial layer and the laser-modified material, thereby realizing the preparation of high aspect ratio micro-nano structures on the surface of hard and brittle materials. Background technique [0002] Hard and brittle materials such as sapphire and quartz glass have high optical transmittance, high hardness, high temperature resistance, low thermal expansion coefficient and excellent chemical stability, and have received extensive attention in aerospace, micro-optics, optoelectronic devices and other fields. However, due to its br...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K26/362B23K26/70
CPCB23K26/362B23K26/702
Inventor 孙洪波刘学青郑家鑫陈岐岱
Owner JILIN UNIV
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