A kind of silicon nitride ceramic copper-clad substrate and preparation method thereof
A technology for silicon nitride ceramics and copper clad substrates is applied in the field of silicon nitride ceramic copper clad substrates and their preparation, which can solve the problems of high cost of brazing filler metals and incapability of continuous production, improve bonding strength, reduce gas and bubbling , the effect of improving the bonding strength
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Embodiment 1
[0042] The thickness of the silicon nitride ceramic substrate used in this embodiment is 0.32 mm, and the target materials plated on the surface of the silicon nitride ceramic substrate are Al and Cr.
[0043] (1) Magnetron sputtering Al on both sides of the silicon nitride ceramic substrate, sputtering at a rate of 25nm / min for 20min; then magnetron sputtering Cr, sputtering at a rate of 25nm / min for 15min;
[0044] (2) Put the coated silicon nitride ceramic substrate obtained in step (1) into a muffle furnace, and raise the temperature from room temperature to 1300° C. at a rate of 5° C. / min under the condition of an air flow rate of 2.5 L / min, and then Keep warm for 60 minutes, cool down to 500°C at 3°C / min, and cool with the furnace;
[0045] (3) Place the flat copper layer on the ceramic backing plate for pre-oxidation, in O 2 In an atmosphere with a content of 160ppm, keep it warm at 800°C for 20 minutes, and cool to room temperature with the furnace; then the oxidized ...
Embodiment 2
[0048] The thickness of the silicon nitride ceramic substrate used in this embodiment is 0.32 mm, and the target materials plated on the surface of the silicon nitride ceramic substrate are Al and Cr.
[0049] (1) Magnetron sputtering Al on both sides of the silicon nitride ceramic substrate, sputtering at a rate of 25nm / min for 20min; then magnetron sputtering Cr, sputtering at a rate of 25nm / min for 15min; finally magnetron sputtering Al, sputtering at a rate of 25nm / min for 5min;
[0050](2) Put the coated silicon nitride ceramic substrate obtained in step (1) into a muffle furnace, and raise the temperature from room temperature to 1300° C. at a rate of 5° C. / min under the condition of an air flow rate of 2.5 L / min, and then Keep warm for 60 minutes, cool down to 500°C at 3°C / min, and cool with the furnace;
[0051] (3) Place the flat copper layer on the ceramic backing plate for pre-oxidation, in O 2 In an atmosphere with a content of 160ppm, keep it warm at 800°C for 2...
Embodiment 3
[0054] The difference from Example 1 lies in that the target materials plated on the surface of the silicon nitride ceramic substrate in this example are Ti and Cr.
[0055] (1) Magnetron sputtering Ti on both sides of the silicon nitride ceramic substrate, sputtering at a rate of 25nm / min for 20min; then magnetron sputtering Cr, sputtering at a rate of 25nm / min for 15min;
[0056] (2) Put the coated silicon nitride ceramic substrate obtained in step (1) into a muffle furnace, and raise the temperature from room temperature to 1300° C. at a rate of 5° C. / min under the condition of an air flow rate of 2.5 L / min, and then Keep warm for 60 minutes, cool down to 500°C at 3°C / min, and cool with the furnace;
[0057] (3) Place the flat copper layer on the ceramic backing plate for pre-oxidation, in O 2 In an atmosphere with a content of 160ppm, keep it warm at 800°C for 20 minutes, and cool to room temperature with the furnace; then the oxidized surface of the copper layer and the ...
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Abstract
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