Power semiconductor device and driving apparatus
A technology of power semiconductors and driving devices, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as limited overcurrent capability, inconsistent switching speed, circuit switch oscillation, etc., and achieve high stability and Reliability, the effect of eliminating vibration interference
Pending Publication Date: 2021-03-26
BYD SEMICON CO LTD
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- Application Information
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Problems solved by technology
The module itself does not have the function of a driving circuit and needs to be driven by an external driving circuit. The switching speed of the semiconductor power module is usually adjusted through the driving resistor in the driving circuit. If you want to adjust the switching speed, you need to modify the driving circuit, which is inconvenient and , because the over-current capability of a single power chip is limited, usually less than 200A, therefore, when it is applied in an occasion that requires high power, it is necessary to use the power chips of multiple semiconductor power modules in parallel, because the performance of each power chip is more or less The existing differences lead to inconsistent switching speeds, which can easily cause switching oscillations in the entire circuit
Method used
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[0018] Embodiments of the present application are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary, and are intended to explain the present application, and should not be construed as limiting the present application.
[0019] A power semiconductor device and a driving device according to an embodiment of the present application will be described below with reference to the accompanying drawings.
[0020] figure 1 is a structural block diagram of a power semiconductor device according to an embodiment of the present application.
[0021] like figure 1 As shown, the power semiconductor device 100 according to an embodiment of the present application includes: at least one power chip 110, at least one driving resistor 120 corresponding to a...
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The invention discloses a power semiconductor device and a driving device. The power semiconductor device comprises a substrate; at least one power chip which is arranged on the substrate, and provided with a control end; at least one driving resistor in one-to-one correspondence with the at least one power chip, and integrated on the substrate, wherein one end of the driving resistor is correspondingly connected with the control end of the power chip; and at least one signal receiving end in one-to-one correspondence with the at least one driving resistor, and connected with the other end ofthe corresponding driving resistor, so that when a signal is received, the power chip is driven to be switched on and off through the driving resistor. According to the power semiconductor device, anextra driving resistor on a driving circuit is omitted, convenience is brought to application of the power semiconductor device, and therefore the switching speed of the power semiconductor device canbe directly adjusted.
Description
technical field [0001] The present application relates to the technical field of automobiles, in particular to a power semiconductor device and a driving device. Background technique [0002] Semiconductor power modules, such as silicon carbide (SiC) power modules, have the characteristics of fast switching speed and low loss. As a discrete device, the module encapsulates a power chip inside and connects to the outside through conductors such as wires, copper skins, and electrodes. The module itself does not have the function of a driving circuit and needs to be driven by an external driving circuit. The switching speed of the semiconductor power module is usually adjusted through the driving resistor in the driving circuit. If you want to adjust the switching speed, you need to modify the driving circuit, which is inconvenient and , because the over-current capability of a single power chip is limited, usually less than 200A, therefore, when it is applied in an occasion tha...
Claims
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IPC IPC(8): H01L25/07H01L25/16H01L25/00H01L23/64
CPCH01L25/072H01L25/165H01L25/50H01L23/647H01L2224/48227H01L2224/49111H01L2924/19107
Inventor 刘春江石彩云杨胜松
Owner BYD SEMICON CO LTD