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A lithography method, lithography apparatus and computer readable storage medium

A lithography machine and computer program technology, which is applied in the fields of semiconductor manufacturing and shared integrated circuit design and manufacturing, can solve the problems that wafer lithography machines cannot be shared, restrict tape-out and verification, and affect economic benefits, and achieve good economic benefits. Benefit, improve the utilization rate, improve the effect of production efficiency

Active Publication Date: 2022-07-01
SIEN QINGDAO INTEGRATED CIRCUITS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Wafer lithography machines of different sizes cannot be shared
[0003] With the scale of integrated circuit production, the limitations of lithography machines that are only suitable for single-size wafers are becoming more and more obvious. Economic benefits, etc.
However, if the hardware of the lithography machine is modified, it will increase the cost. Therefore, there is an urgent need for a lithography method that can be applied to wafers of different sizes to adapt to the trend of shared integrated circuit design and manufacturing.

Method used

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  • A lithography method, lithography apparatus and computer readable storage medium
  • A lithography method, lithography apparatus and computer readable storage medium
  • A lithography method, lithography apparatus and computer readable storage medium

Examples

Experimental program
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Embodiment 1

[0048] In the photolithography process, masks and mask masters are very commonly used tools to form patterns or patterns on substrates. The function of the photomask is to copy the pattern on the photomask to the entire substrate or another photomask at one time in a corresponding manner through the exposure process. The reticle is to copy the pattern contained on the reticle to the entire substrate or another mask in a Step&Repeat manner.

[0049] Whether it is a single exposure with a photomask or a step-by-step repeated exposure of the reticle, the size of the substrate suitable for the design of the general lithography machine is fixed and fixed.

[0050] This embodiment provides a photolithography method, by which the same photolithography machine can be applied to substrates of different sizes. like figure 1 As shown, the lithography method of the present invention comprises the following steps:

[0051] Place the substrate to be processed and the original design mask...

Embodiment 2

[0060] This embodiment provides a lithography apparatus, such as Figure 7 As shown, a schematic diagram of the functional modules of the lithography apparatus is shown, the lithography apparatus includes an exposure system, a mask stage system, a substrate carrying device, a substrate transfer system and a focusing alignment system, and the exposure system includes an optical system and For a projection objective lens, the focusing system includes a first control module, a second control module and a third control module.

[0061] The substrate transfer system transports and places the substrate to be processed on the substrate carrier of the lithography machine in the lithography preparation stage, and the mask stage system places the design mask original on the mask stage in the lithography preparation stage. The focusing alignment system adjusts the lithography machine according to the ratio between the size of the designed substrate of the lithography machine and the size...

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Abstract

The present invention provides a lithography method, a lithography apparatus, and a computer-readable storage medium. The method adjusts the lithography method according to the ratio between the size of the designed substrate of the lithography machine and the size of the substrate to be processed. A machine is used to form a target pattern on the substrate to be processed through the design mask master. As a result, wafers of different sizes can be lithography using the original design mask of the lithography machine in the same lithography machine, for example, the lithography of 8-inch and 6-inch wafers can be realized on an 8-inch lithography machine. In addition, the method of the present invention does not need to modify or replace the hardware of the lithography machine itself, but adjusts the vertical distance between the original design mask of the lithography machine, the substrate carrying device and the projection objective lens of the lithography machine, The lithography of different size wafers by the same lithography machine is realized, and the target pattern is formed on the wafer, so the production cost will not be increased on the premise of ensuring the yield of wafer preparation, and it has good economic benefits.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to the field of shared integrated circuit design and manufacture, and more particularly to a lithography method, a lithography apparatus and a computer-readable storage medium. Background technique [0002] In the design and manufacturing process of integrated circuits, the lithography process of substrates (such as wafers) is the basic process of semiconductor manufacturing, and the lithography machine is an important lithography equipment in the basic process. A lithography machine generally includes structures such as an optical system, a mask stage system, a projection objective lens system, a substrate transfer system, and a workbench. And a lithography machine is generally only suitable for lithography of a wafer of one size. For example, 6-inch wafer lithography machine, 8-inch wafer lithography machine and 12-inch wafer lithography machine are commonly use...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/70258G03F7/70308G03F7/70216
Inventor 王津洲
Owner SIEN QINGDAO INTEGRATED CIRCUITS CO LTD