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Phase change memory system, phase change memory device, and phase change memory device refresh method

A phase change memory, memory cell technology, applied in static memory, digital memory information, information storage and other directions, can solve different problems

Pending Publication Date: 2021-04-20
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the voltage value and the degree of drift as sensing criteria are different for each memory element, the timing of a refresh operation that is desired and / or required to reduce and / or prevent sensing errors may be different for each memory element

Method used

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  • Phase change memory system, phase change memory device, and phase change memory device refresh method
  • Phase change memory system, phase change memory device, and phase change memory device refresh method
  • Phase change memory system, phase change memory device, and phase change memory device refresh method

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Embodiment Construction

[0029] Hereinafter, various example embodiments of the inventive concepts will be described with reference to the accompanying drawings.

[0030] figure 1 is a graph for explaining a difference change of a phase change memory element due to a drift phenomenon according to at least one example embodiment. Phase change memory elements can store different data according to the resistance value of the phase change material. The voltage value applied to the phase-change memory element also changes with the resistance value.

[0031] For example, phase change materials become crystalline when heated and then cooled slowly, and become amorphous when rapidly cooled. A phase change material in a crystalline state has low electrical resistance, while a phase change material in an amorphous state has high electrical resistance.

[0032] Therefore, when a current and / or voltage is applied to a resistive material (e.g., a phase change material), the voltage applied to the crystalline ph...

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Abstract

A phase change memory system comprises a phase change memory device which includes a plurality of memory units including a plurality of memory cells in units of at least one or more codewords and a phase change memory controller which performs a chip refresh operation for refreshing the entire phase change memory device, wherein the phase change memory device includes a setting circuitry which determines one of the plurality of memory units in a desired manner, a refresh controller which refreshes the decided memory unit, a sensing circuitry which senses data of at least one or more codewords included in the refreshed memory unit, and a request circuitry which requests a host for the chip refresh operation on the basis of a result of the sensing operation.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2019-0129762 filed with the Korean Intellectual Property Office on October 18, 2019, the entire contents of which are incorporated herein by reference. technical field [0002] Various example embodiments of inventive concepts relate to a phase change memory system, a phase change memory device, and / or a method for refreshing a phase change memory device. Background technique [0003] Based on and / or depending on the resistance value and / or the voltage value, in a phase change memory device using a variable resistance element (GST) and an access element (Voice Threshold Switch: OTS), the memory element may have a set state value and / or Reset state value. The difference in voltage applied to a memory element moves in an increasing direction due to element characteristics, which is defined as a drift phenomenon. Errors may occur in data sensing operations of memory cells due to a drift phenomenon of...

Claims

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Application Information

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IPC IPC(8): G11C13/00
CPCG11C13/0004G11C13/0033G11C13/004G11C13/003G11C2213/72G11C2213/79G06F3/0673G06F3/0646G06F3/0604
Inventor 申闰盛李光振
Owner SAMSUNG ELECTRONICS CO LTD
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