A kind of fabrication technology of mosfet device

A manufacturing process and device technology, which is applied in the field of MOSFET device manufacturing process, can solve problems such as extrusion deformation of the transistor shell and damage to the transistor, and achieve the effect of reducing the probability of damage

Active Publication Date: 2021-10-26
江苏晟华半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, when the transistor is in use, it is necessary to bend the pins of the transistor to facilitate the insertion of the pins into the PCB board. However, when the pins are bent, it is easy to squeeze and deform the transistor shell, causing damage to the transistor.

Method used

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  • A kind of fabrication technology of mosfet device
  • A kind of fabrication technology of mosfet device
  • A kind of fabrication technology of mosfet device

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Embodiment Construction

[0032] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0033] It should be noted that when a component is referred to as being “fixed on” or “disposed on” another component, it may be directly on the other component or indirectly on the other component. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element.

[0034] It is to be understood that the terms "length", "width", "top", "bottom", "front", "rear", "left", "right", "vertical", "horizontal", "top" , "bottom", "inner", "outer" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for t...

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Abstract

The invention provides a manufacturing process of a MOSFET device, comprising step 1, processing a slot on the side wall of the pin; step 2, welding the pin and the output end of the transistor chip; step 3, welding the transistor chip with the pin Embedding in the shell and fixing it; step 4, inserting the insertion part of the reinforcing rib into the slot of the pin; step 5, using a welding device to weld and fix the reinforcing rib and the pin. It is an object of the present invention to provide a MOSFET device with reduced probability of transistor damage.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to a manufacturing process of a MOSFET device. Background technique [0002] Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits ). According to the polarity of its "channel" (working carrier), MOSFET can be divided into two types: "N-type" and "P-type", which are usually called NMOSFET and PMOSFET. Other abbreviations include NMOS, PMOS, etc. ; [0003] At present, when a transistor is in use, it is necessary to bend the pins of the transistor so that the pins can be inserted into the PCB board conveniently. However, when the pins are bent, the casing of the transistor is easily squeezed and deformed, causing damage to the transistor. Contents of the invention [0004] The invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/336H01L29/78
CPCH01L21/50H01L29/66477H01L29/78
Inventor 许海东王礼选
Owner 江苏晟华半导体有限公司
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