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Sensitive amplifier, control method of sensitive amplifier and memory

A technology of a sense amplifier and a control terminal, which is applied to the control method and memory of the sense amplifier, and the field of the sense amplifier, can solve the problems of increasing the sense amplifier's sensing margin, the sensing margin is too small, etc., so as to solve the problem that the sensing margin is too small. , Increase the sensing margin, and quickly and effectively amplify the effect of the signal

Active Publication Date: 2022-04-15
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a sense amplifier that can eliminate the offset noise introduced by the threshold voltage mismatch, increase the sensing margin of the sense amplifier, and solve the problem of too small sensing margin, and a control method for the sense amplifier and memory

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  • Sensitive amplifier, control method of sensitive amplifier and memory
  • Sensitive amplifier, control method of sensitive amplifier and memory
  • Sensitive amplifier, control method of sensitive amplifier and memory

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Embodiment Construction

[0050] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0051] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0052] It can be understood that the terms "first", "second" and the like used in this application may be...

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Abstract

The invention relates to a sensitive amplifier, a control method of the sensitive amplifier and a memory. The sense amplifier includes: a first power input terminal, a second power input terminal, a first switch tube, a second switch tube, a third switch tube, a fourth switch tube, a fifth switch tube, a first NMOS tube, a second NMOS tube tube, the first PMOS tube, and the second PMOS tube. When the sense amplifier is working, by outputting appropriate sequential logic signals to the five switch tubes respectively to control the on and off of the five switch tubes, it is possible to eliminate the threshold voltage mismatch between the first NMOS tube and the second NMOS tube. With the introduction of offset noise, the sensing margin of the sense amplifier is increased, so that the sense amplifier can amplify the signal quickly and effectively, and solve the problem of insufficient sensing margin.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a sense amplifier, a control method of the sense amplifier and a memory. Background technique [0002] A dynamic random access memory (DRAM) among memory devices operates by writing and reading data to and from memory cells connected to a bit line (BL) and a complementary bit line (BLB). Sensitive amplifiers are widely used in various memory devices. When applied to dynamic random access memory, turning on the sense amplifier at an appropriate time point can amplify the weak voltage difference between the bit line and the complementary bit line, thereby making Data stored in the memory cell can be read correctly. [0003] At present, due to the continuous reduction of the power supply voltage of DRAM and the shrinking of device size, the sensing margin of the traditional sense amplifier is getting smaller and smaller. There is a threshold voltage mismatch between d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4091G11C11/4097G11C7/08G11C5/14
CPCG11C11/4091G11C11/4097G11C7/08G11C5/147G11C11/4094G11C7/065G11C11/4085
Inventor 程伟杰
Owner CHANGXIN MEMORY TECH INC
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