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Sensitive amplifier and its control method

A technology for sensitive amplifiers and control terminals, which is applied in the direction of instruments, static memory, digital memory information, etc., can solve the problems of too small sensing margin and increase the sensing margin of sensitive amplifiers, etc., to increase the sensing margin and solve the problem of sensing The effect of quickly and effectively amplifying the signal when the measurement margin is too small

Active Publication Date: 2022-04-12
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to provide a sense amplifier and its control method that can eliminate the offset noise introduced by the sense amplifier due to threshold voltage mismatch, increase the sense margin of the sense amplifier, and solve the problem of too small sense margin

Method used

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  • Sensitive amplifier and its control method
  • Sensitive amplifier and its control method
  • Sensitive amplifier and its control method

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Embodiment Construction

[0054] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0056] It can be understood that the terms "first", "second" and the like used in this applicat...

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Abstract

The present invention relates to a sensitive amplifier and its control method, comprising: a first power supply terminal, a second power supply terminal, a first switch unit, a second switch unit, a third switch unit, a fourth switch unit, a first NMOS transistor, a Two NMOS transistors, a first PMOS transistor, a second PMOS transistor, a third PMOS transistor and a fourth PMOS transistor. When the sense amplifier is in operation, by outputting appropriate sequential logic signals to the four switching units respectively to control the opening and closing of the four switching units, the first NMOS transistor, the second NMOS transistor, and the first PMOS transistor can be eliminated. The offset noise introduced by the threshold voltage mismatch with the second PMOS transistor increases the sensing margin of the sense amplifier, solves the problem of too small sensing margin, and enables the sense amplifier to amplify signals quickly and effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a sense amplifier and a control method thereof. Background technique [0002] A dynamic random access memory (DRAM) among memory devices operates by writing and reading data to and from memory cells connected to a bit line (BL) and a complementary bit line (BLB). Sensitive amplifiers are widely used in various memory devices. When applied to dynamic random access memory, turning on the sense amplifier at an appropriate time point can amplify the weak voltage difference between the bit line and the complementary bit line, thereby making Data stored in the memory cell can be read correctly. [0003] At present, due to the continuous reduction of the power supply voltage of DRAM and the shrinking of device size, the sensing margin of the traditional sense amplifier is getting smaller and smaller. There is a threshold voltage mismatch between different devices, and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06G11C7/08
CPCG11C7/08G11C7/06G11C7/065G11C11/4091G11C11/419G11C11/4074G11C11/4094
Inventor 程伟杰
Owner CHANGXIN MEMORY TECH INC
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