Dynamic random access memory and method of making the same

Abstract

The invention provides a dynamic random access memory and its manufacturing method. The memory includes a base, a plurality of isolation structures, a plurality of conductor structure groups, a plurality of bit line structures and a plurality of spacers. The substrate has multiple active regions. The isolation structure is located in the base and extends along the first direction. Each isolation structure is disposed between two adjacent active regions. The conductor structure group is parallelly arranged on the base along the first direction. The bit line structure is parallelly arranged on the substrate along the second direction. The bit line structure runs through the set of conductor structures. The spacer is arranged parallel to the sidewall of the bit line structure along the second direction to electrically isolate the bit line structure and the conductor structure group.

Description

technical field [0001] The invention relates to a memory and a manufacturing method thereof, in particular to a dynamic random access memory and a manufacturing method thereof. Background technique [0002] As technology advances with each passing day, advances in electronic components have increased the need for greater storage capacity. To increase storage capacity, storage elements, especially dynamic random access memories (DRAMs), have become smaller and more densely packed. Therefore, how to integrate more memory cells on one chip is being studied in recent years. [0003] However, as the density of the DRAM increases, it is easy to form a tapered profile when forming a bit line with a high aspect ratio. A bitline having a tapered profile reduces the size of the capacitor contact and increases the possibility of a short circuit between the bitline and the capacitor contact. That is to say, the critical dimension in the DRAM is gradually reduced, which causes the con...

AI Technical Summary

Problems solved by technology

That is to say, the critical dimension in the DRAM is gradually reduced, which causes the contact resistance between the capacitor contact window and the storage capacitor in the DRAM to increase, thereby reducing the reliability of the DRAM. (reliability)

Once the misalignment of the bit line occurs, the short circuit between the bit line and the capacitor contact window will become worse

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