Preparation method of polycrystalline zinc selenide

A technology of zinc selenide and hydrogen selenide, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of insufficient thickness of zinc selenide products
CN112795897AActive Publication Date: 2021-05-14安徽中飞科技有限公司

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
安徽中飞科技有限公司
Publication Date
2021-05-14
Patent Text Reader

Abstract

The invention provides a preparation method of polycrystalline zinc selenide. The preparation method comprises the following steps that the surface of a polycrystalline zinc selenide sheet with the thickness of 30-50mm is treated to obtain a zinc selenide polished wafer with the roughness being less than Ra20, the zinc selenide polished wafer is cleaned with plasma, and the cleaned zinc selenide polished wafer is put on a graphite substrate; step 2, the zinc material is installed in a crucible; step 3, a graphite substrate depositor is mounted on a graphite crucible and then put in a chemical vapor deposition vacuum furnace; step 4, argon is introduced into the chemical vapor deposition vacuum furnace at room temperature; step 5, the crucible is heated, and the graphite substrate depositor is heated; step 6, the zinc starts to evaporate, hydrogen selenide gas carried by the argon is introduced into the graphite substrate depositor, and argon is introduced into the crucible; and step 7, after zinc evaporation is finished, introducing of the hydrogen selenide gas is stopped, the crucible is cooled, the graphite substrate depositor is cooled, and the final polycrystalline zinc selenide with the overall thickness of 60-100mm is obtained after being discharged from the furnace. According to the invention, the thick polycrystalline zinc selenide material can be prepared.
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Description

technical field

[0001] The disclosure relates to the technical field of infrared material preparation, in particular to a preparation method of polycrystalline zinc selenide. Background technique

[0002] Zinc selenide is a semiconductor light-emitting matrix material with excellent performance, wide band gap, high refractive index, high light transmittance, etc. It is widely used in physics, optics, sensors, optoelectronic materials and other fields. Zinc selenide materials have irreplaceable advantages in traditional optoelectronic applications, such as: blue light-emitting devices, infrared thermal imagers, all-weather optical devices, short-wavelength lasers, and transmission window materials, both in basic research and practical applications. Broad application prospects.

[0003] At present, the main method of preparing ZnSe is chemical vapor deposition (CVD), using chemical vapor deposition vacuum furnace equipment, using high-purity zinc and high-purity H 2 Se gas i...

Claims

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