Memory programming operation method and device

Abstract

The invention relates to a programming operation method and device for a memory. The memory includes a first input terminal, a first storage string, a second storage string and a second input terminal sequentially arranged in a preset direction. The first storage string includes a series A plurality of first memory cells, the second memory string includes a plurality of second memory cells connected in series, the programming operation method includes: precharging the programming operation, including providing a first preset voltage to the first input terminal, and charging the first The gate layer of the memory cell provides a second preset voltage to precharge the channel in the first memory string; perform a programming operation to program the second memory cell, thereby performing a programming operation on the second memory string When , the charge density of the channel can be effectively reduced in the pre-charging stage of the programming operation, thereby reducing programming disturb.

Description

【Technical field】 [0001] The present invention relates to the technical field of memory, and in particular, to a method and device for programming a memory. 【Background technique】 [0002] As technology evolves, the semiconductor industry is constantly looking for new production methods that allow for a greater number of memory cells per memory die in a memory device. Among them, 3D NAND memory has become a relatively cutting-edge 3D memory technology with great development potential due to its advantages of high storage density and low cost. [0003] At present, when a 3D NAND memory is programmed, a larger forward bias voltage is usually provided to the source terminal located at the source side of the channel during the precharge stage of the programming operation to attract electrons in the channel to migrate to the source terminal and eventually absorbed by the source terminal, thereby reducing the channel charge density. [0004] However, with the increase in the num...

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Problems solved by technology

[0004] However, as the number of stacked layers in 3D NAND memory increases, the length of the channel becomes longer and longer, so that the electrons in the channel farther away from the source terminal are subjected to a limited electric field force and cannot efficiently migrate to the source terminal. As a result, the channel charge density cannot be effectively reduced in the pre-charging stage, and the programming disturbance is serious.

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