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Application of Cesium Tungsten Bronze as Solder Welding Sapphire

A cesium tungsten bronze, the technology of using cesium tungsten bronze, applied in welding equipment, welding medium, welding equipment and other directions, can solve the problems of cracks, reducing the bending strength and light transmission performance of joints, insufficient joint strength, etc.

Active Publication Date: 2022-07-08
CHANGZHOU VOCATIONAL INST OF ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if metal solder is used, the weld will be opaque, and due to the large difference in thermal expansion coefficient between the metal and sapphire, a large stress will be generated inside the welded structure, which will reduce the bending strength of the weld and even cause cracks
If glass solder is used, the bending strength of the joint will decrease, and the glass is prone to generate a large number of bubbles under laser heating conditions, further reducing the bending strength and light transmission performance of the joint. In brazing using other methods of heating, the glass can be better. Achieves wetting and bonding, but insufficient joint strength due to glass itself having lower strength than sapphire

Method used

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  • Application of Cesium Tungsten Bronze as Solder Welding Sapphire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] (1) Surface polishing is performed on the cut sapphire wafer so that the surface roughness Ra of the sapphire is 3.000 nm.

[0047] (2) The chemical formula of 55wt% is Cs 0.7 WO 3 The cesium tungsten bronze was mixed with 45wt% ethanol to obtain a cesium tungsten bronze slurry;

[0048] (3) Coat the cesium tungsten bronze slurry on the surface of the sapphire to be welded, and place the two sapphire surfaces to be welded against each other, and apply pressure to make the thickness of the cesium tungsten bronze in the weld be 30 μm;

[0049] (4) Use a molybdenum clamp to clamp the sapphire, apply a pressure of 20N to the sapphire to be welded, set the heating target temperature of the heater to 800°C, increase the temperature at a rate of 5°C / min, use a wavelength of 1050nm, a laser spot diameter of 2mm, and a power of 5000W The infrared laser is irradiated to the weld through one side of the sapphire, and the irradiation time is 5s, and then the power of the infrared...

Embodiment 2

[0053] (1) Surface polishing is performed on the cut sapphire wafer so that the surface roughness Ra of the sapphire is 4.000 nm.

[0054] (2) The chemical formula of 97wt% is Cs 0.8 WO 3 The cesium tungsten bronze slurry was mixed with 3wt% ethanol to obtain a cesium tungsten bronze slurry;

[0055] (3) Coat the cesium tungsten bronze slurry on the surface of the sapphire to be welded, and place the two sapphire surfaces to be welded against each other, and apply pressure, so that the thickness of the cesium tungsten bronze in the weld is 80 μm;

[0056] (4) Use a molybdenum clamp to clamp the sapphire, apply a pressure of 50N to the sapphire to be welded, set the heating target temperature of the heater to 1200°C, increase the temperature at a rate of 10°C / min, use a wavelength of 1050nm, a laser spot diameter of 10mm, and a power of 8000W The infrared laser is irradiated to the weld through one side of the sapphire, and the irradiation time is 30s, and then the power of t...

Embodiment 3

[0060] (1) Surface polishing is performed on the cut sapphire wafer so that the surface roughness Ra of the sapphire is 5.000 nm.

[0061] (2) The chemical formula of 97wt% is Cs 0.8 WO 3 The cesium tungsten bronze slurry was mixed with 3wt% ethanol to obtain a cesium tungsten bronze slurry;

[0062] (3) Coat the cesium tungsten bronze slurry on the surface of the sapphire to be welded, and place the two sapphire surfaces to be welded against each other, and apply pressure, so that the thickness of the cesium tungsten bronze in the weld is 70 μm;

[0063] (4) Use a molybdenum fixture to clamp the sapphire, apply a pressure of 300N to the sapphire to be welded, set the heating target temperature of the heater to 700°C, increase the temperature at a rate of 8°C / min, use a wavelength of 1050nm, a laser spot diameter of 3mm, and a power of 4000W The infrared laser is irradiated to the weld through one side of the sapphire, and the irradiation time is 20s, and then the power of t...

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Abstract

The invention provides the application of cesium tungsten bronze as solder for welding sapphire, and belongs to the technical field of sapphire welding. By filling the sapphire weld with cesium tungsten bronze, the invention can improve the absorption efficiency of the laser energy by the weld, thereby realizing the local heating of the sapphire weld, and then completing the welding of the sapphire; at the same time, the sapphire is also an oxide, which is closely related to the cesium tungsten. Bronze can form a certain mutual dissolution. During the infrared laser transillumination welding process, the sapphire at the weld joint melts, and the cesium tungsten bronze dissolves into the sapphire, and its spatial distribution density decreases, resulting in a decrease in the absorption energy density of light energy at the weld. , until the absorbed light energy is not enough to keep the sapphire in the weld volume in a molten state, the sapphire weld solidifies, and the welding process is completed.

Description

technical field [0001] The invention relates to the technical field of sapphire welding, in particular to the application of cesium tungsten bronze as a solder for welding sapphire. Background technique [0002] Sapphire is mainly composed of α-Al 2 O 3 It has the advantages of high hardness, high melting point and high wear resistance. At the same time, due to its good light transmittance and low transmission light scattering rate, it has been widely used in medical equipment, aerospace, military industry and other fields, such as making observation windows for aviation equipment. At the same time, the demand for large-size sapphire wafers with a length and width of more than 300mm in related fields is increasing day by day. At present, the maximum diameter of sapphire wafer products after artificial slicing is about 300mm, which is processed into a square window with a side length of only about 200mm, which cannot meet the size requirements of sapphire wafers in the abo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K35/24B23K26/21B23K26/324
CPCB23K35/24B23K26/21B23K26/324
Inventor 李书齐崔炜赵汉宇殷文建蒋伟成
Owner CHANGZHOU VOCATIONAL INST OF ENG