Preparation method of monocrystalline silicon-like ingot and monocrystalline silicon-like ingot

Abstract

The invention provides a preparation method of a monocrystalline-like silicon ingot and the monocrystalline-like silicon ingot. The preparation method comprises the steps of laying a seed crystal layer at the bottom of a crucible to form a seeding layer; filling a silicon material above the seed crystal layer until the height of the silicon material is 1 / 3-2 / 3 of the height of the crucible; laying a phosphorus alloy on the silicon material to form a doping layer; continuously filling the silicon material to the top of the crucible; putting the crucible into an ingot furnace, vacuumizing the ingot furnace, and heating under the protection of argon to melt the silicon material; and performing crystal growth on the silicon material by adopting a directional solidification method until a monocrystalline-like silicon ingot is formed. According to the preparation method of the monocrystalline-like silicon ingot and the monocrystalline-like silicon ingot, the phosphorus alloy can be completely melted and uniformly diffused into the silicon material, so that the quality of the monocrystalline-like silicon ingot is improved.

Description

technical field [0001] The invention relates to a method for preparing a quasi-single crystal silicon ingot and a quasi-single crystal silicon ingot, in particular to a method for preparing a quasi-single crystal silicon ingot and a quasi-single crystal silicon ingot for improving photoelectric conversion efficiency. Background technique [0002] In the existing method for preparing N-type monocrystalline silicon ingots, the bottom of the crucible is usually filled with phosphorus alloy as a doped layer, then filled with a quasi-single crystal seed crystal as a seeding layer, and finally filled with polycrystalline silicon material to melt and use Directional solidification forms a quasi-monocrystalline silicon ingot. Or the filling order of the seed layer and the doped layer is exchanged. However, since the doped layer is located at a lower position in the crucible, the melting temperature is relatively low, so during the melting process, the phosphorus alloy tends to be p...

AI Technical Summary

Problems solved by technology

However, since the doped layer is located at a lower position in the crucible, the melting temperature is relatively low, so during the melting process, the phosphorus alloy tends to be partially unmelted, which reduces the phosphorus content in the quasi-single crystal silicon ingot and affects the similarity. Quality of crystalline silicon ingot

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