Preparation method of monocrystalline silicon-like ingot and monocrystalline silicon-like ingot
A technology of quasi-single-crystal silicon and single-crystal silicon ingots is applied to the preparation method of quasi-single-crystal silicon ingots and the field of quasi-single-crystal silicon ingots, and can solve the problems affecting the quality of quasi-single-crystal silicon ingots, reducing the phosphorus content of quasi-single-crystal silicon ingots, Phosphorus alloys are not melted and other problems, so as to improve the photoelectric conversion efficiency and improve the quality of cast single crystals.
Inactive Publication Date: 2021-06-25
CSI CELLS CO LTD +1
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However, since the doped layer is located at a lower position in the crucible, the melting temperature is relatively low, so during the melting process, the phosphorus alloy tends to be partially unmelted, which reduces the phosphorus content in the quasi-single crystal silicon ingot and affects the similarity. Quality of crystalline silicon ingot
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[0018] The present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings. However, this embodiment does not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to this embodiment are included in the protection scope of the present invention.
[0019] Please refer to Figure 1 to Figure 2 Shown is the embodiment of the preparation method of quasi-single crystal silicon ingot of the present invention, and the preparation method of described quasi-single crystal silicon ingot comprises:
[0020] laying seed crystals on the bottom of the crucible to form a seed crystal layer;
[0021] Fill the silicon material above the seed layer to between 1 / 3 and 2 / 3 of the height of the crucible;
[0022] laying phosphorus alloy on the silicon material to form a doped layer;
[0023] Continue to fill the silicon material to the top of the crucible;
[0024] Put t...
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Abstract
The invention provides a preparation method of a monocrystalline-like silicon ingot and the monocrystalline-like silicon ingot. The preparation method comprises the steps of laying a seed crystal layer at the bottom of a crucible to form a seeding layer; filling a silicon material above the seed crystal layer until the height of the silicon material is 1 / 3-2 / 3 of the height of the crucible; laying a phosphorus alloy on the silicon material to form a doping layer; continuously filling the silicon material to the top of the crucible; putting the crucible into an ingot furnace, vacuumizing the ingot furnace, and heating under the protection of argon to melt the silicon material; and performing crystal growth on the silicon material by adopting a directional solidification method until a monocrystalline-like silicon ingot is formed. According to the preparation method of the monocrystalline-like silicon ingot and the monocrystalline-like silicon ingot, the phosphorus alloy can be completely melted and uniformly diffused into the silicon material, so that the quality of the monocrystalline-like silicon ingot is improved.
Description
technical field [0001] The invention relates to a method for preparing a quasi-single crystal silicon ingot and a quasi-single crystal silicon ingot, in particular to a method for preparing a quasi-single crystal silicon ingot and a quasi-single crystal silicon ingot for improving photoelectric conversion efficiency. Background technique [0002] In the existing method for preparing N-type monocrystalline silicon ingots, the bottom of the crucible is usually filled with phosphorus alloy as a doped layer, then filled with a quasi-single crystal seed crystal as a seeding layer, and finally filled with polycrystalline silicon material to melt and use Directional solidification forms a quasi-monocrystalline silicon ingot. Or the filling order of the seed layer and the doped layer is exchanged. However, since the doped layer is located at a lower position in the crucible, the melting temperature is relatively low, so during the melting process, the phosphorus alloy tends to be p...
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IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 陈伟王万胜李林东王全志陈志军丁云飞
Owner CSI CELLS CO LTD