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A Temperature Compensation Bias Circuit Applied to RF Power Amplifier

A temperature compensation and bias circuit technology, which is applied to power amplifiers and improved amplifiers to reduce temperature/power supply voltage changes, etc., can solve problems affecting the temperature compensation effect and linearity of power amplifiers in radio frequency amplifier circuits, and achieve good regulation and weaken the impact Effect

Active Publication Date: 2022-04-12
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0005] The invention provides a temperature compensation bias circuit applied to a radio frequency power amplifier, which is used to solve the problem that the ballast resistance of the active bias circuit of the radio frequency power amplifier affects the bias point under the radio frequency working state and affects the power amplifier of the radio frequency amplifier circuit Technical issues of temperature compensation effect and linearity

Method used

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  • A Temperature Compensation Bias Circuit Applied to RF Power Amplifier
  • A Temperature Compensation Bias Circuit Applied to RF Power Amplifier
  • A Temperature Compensation Bias Circuit Applied to RF Power Amplifier

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Embodiment Construction

[0026] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] For ease of understanding, see Figure 2 to Figure 4 , the present invention provides an embodiment of a temperature compensation bias circuit applied to a radio frequency power amplifier, comprising: a first resistor R1, a second resistor R2, a first drive tube Q1, a second drive tube Q2, a first triode Tube Q4, second triode Q5, third r...

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Abstract

The invention discloses a temperature compensation bias circuit applied to a radio frequency power amplifier, which provides base bias for the power tube in the form of a first triode and a second triode dual drive tube, and the first drive tube is in a common Emitter working configuration, DC negative feedback to the second drive tube to achieve temperature compensation effect, so that the ballast resistor biased to the power tube is independent of the temperature compensation negative feedback loop, weakening the effect of the ballast resistor on bias temperature compensation The effect of making it better for adjusting the linearity of the power amplifier solves the problem that the ballast resistance of the existing RF power amplifier active bias circuit affects the bias point under the RF working state and affects the temperature compensation of the RF amplifier circuit power amplifier Technical issues of performance and linearity.

Description

technical field [0001] The invention relates to the technical field of radio frequency circuits, in particular to a temperature compensation bias circuit applied to radio frequency power amplifiers. Background technique [0002] The power amplifier (Power Amplifier, PA) in the communication field is one of the key units in the wireless communication link. Its function is to amplify the modulated electrical signal carrying the modulation information to a certain power level, and to excite the back-end antenna Generate corresponding electromagnetic wave signals to realize wireless signal transmission. [0003] In high-frequency monolithic microwave integrated circuits (MMICs) for mobile phones, heterojunction bipolar transistors (Heterojunction Bipolar Transistor, HBT) are mostly manufactured because of their single power supply, easy matching, good linearity, and high power density. For the current mainstream GaAs HBT process, since the thermal conductivity of gallium arseni...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/30H03F3/20
CPCH03F1/30H03F3/20
Inventor 林少鑫章国豪陈建强
Owner GUANGDONG UNIV OF TECH
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