Biasing circuit for radio frequency power amplifier
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- GUANGDONG UNIV OF TECH
- Publication Date
- 2021-07-13
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Abstract
Description
technical field
[0001] The invention relates to the technical field of radio frequency integrated circuits, in particular to a bias circuit applied to radio frequency power amplifiers, capable of improving the gain flatness of radio frequency power amplifiers, and having a temperature compensation function. Background technique
[0002] The RF power amplifier is at the final stage of the transmission chain, and its function is to amplify the power of the high-frequency modulated carrier signal, and radiate the signal into space through the antenna for long-distance transmission. Therefore, in order to ensure that the other party can receive the sender's information accurately in a certain area, certain requirements must be placed on the output power and linearity of the RF power amplifier, and the increasing update of information technology has continuously prompted the system to adjust the RF power. The performance requirements of amplifiers are getting higher and higher. ...