Wireless passive temperature compensation method for film bulk acoustic wave pressure sensor

A thin-film bulk acoustic wave and pressure sensor technology, which is applied in the application of acoustic methods for fluid pressure measurement, fluid pressure measurement, instruments, etc., can solve the problems of high circuit requirements, difficult implementation, poor anti-interference ability, etc. The effect of low electromagnetic interference and long service life

Active Publication Date: 2018-04-20
深圳市封神微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solution has high requirements on the circuit, is difficult to realize, and has poor anti-interference ability.

Method used

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  • Wireless passive temperature compensation method for film bulk acoustic wave pressure sensor
  • Wireless passive temperature compensation method for film bulk acoustic wave pressure sensor
  • Wireless passive temperature compensation method for film bulk acoustic wave pressure sensor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The preparation method of the non-sealed and sealed film bulk acoustic wave sensor comprises the following steps:

[0038] Step (1), double-sided polished silicon wafer and cleaned, then through the sequence of acetone, ethanol, deionized water, and finally dried by nitrogen, as figure 1 (a) shown.

[0039] Step (2), on the basis of step (1), adopt 60-500 nanometer thick aluminum (also can adopt gold, aluminum, tungsten, molybdenum etc.), utilize photolithography and etching to form the lower electrode of FBAR device, as figure 1 (b) shown.

[0040] Step (3), on the basis of step (2), adopt 50-5000 nanometer thick zinc oxide (also can be aluminum nitride, lithium niobate, lithium zirconate, lithium tantalate, lithium tetraborate, bismuth germanate , bismuth silicate, etc.) to make the piezoelectric layer, and use sputtering to form a deposited film, such as figure 1 (c) shown.

[0041] Step (4), on the basis of step (3), use diluted hydrochloric acid solution to exp...

Embodiment 1

[0045] Example 1, such as image 3 :

[0046] a. The wireless pulse interrogation signal received by the outside through the directional antenna 12 and the directional antenna 14 excites the sealed thin-film bulk acoustic wave sensor 9 and the non-sealed thin-film bulk acoustic wave sensor 10 to work;

[0047] b. The excited sealed thin-film bulk acoustic wave sensor 9 is subjected to frequency deviation due to temperature and pressure in the environment. The frequency deviation occurs when the non-sealed thin-film BAW sensor 10 is subjected to the temperature in the environment. At this time, if the frequency of the external inquiry signal is consistent with the resonant frequency of a certain thin-film bulk acoustic wave sensor, the energy of the thin-film bulk acoustic wave sensor is maximum at this time. Finally, the resonant frequency of the thin film bulk acoustic wave sensor affected by the environment will be transmitted from the directional antenna 11 and the direct...

Embodiment 2

[0052] The two resonance frequencies of the sealed film bulk acoustic wave (FBAR) sensor and the non-sealed film bulk acoustic wave (FBAR) sensor are different, and the frequency deviation of the film bulk acoustic wave (FBAR) sensor with a low resonance frequency in the normal working range should be less than two The resonant frequency of the film bulk acoustic wave (FBAR) sensor is different, so as to avoid interference between frequencies (this example sets the non-sealed film bulk acoustic wave sensor 19 as a sensor with a low resonant frequency to describe the example conveniently, and it should be pointed out that 19 is not limited to one with a low resonant frequency thin film bulk acoustic wave sensor). Combine below Figure 4 The application diagram of the present invention is described:

[0053] a. The wireless pulse interrogation signal received by the outside world through the antenna 21 excites the sealed film BAW sensor 17 and the non-sealed film BAW sensor 19 ...

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Abstract

The invention discloses a wireless passive temperature compensation method for a film bulk acoustic wave pressure sensor. On the one hand, the film bulk acoustic wave sensor of a conventional transmitter is replaced with a pair of parallel sealed and unsealed film bulk acoustic wave devices. On the other hand, a conventional wired active temperature compensation method is replaced with a wirelesspassive temperature compensation method. Compared with traditional piezoresistive pressure sensors and capacitive pressure sensors, the film bulk acoustic wave pressure sensor has high sensitivity andhigh resolution, presents the same in the form of frequency, and is less affected by electromagnetic interference.

Description

technical field [0001] The invention relates to the technical field of acoustic wave sensors, in particular to a wireless passive temperature compensation method for a film bulk acoustic wave (FBAR) pressure sensor. Background technique [0002] The detection of parameters such as temperature and pressure in high temperature environment and complex environment is an important task in the fields of petroleum, chemical industry, automobile, aerospace, military and other industries and national defense. Film Bulk Acoustic Wave (FBAR) oscillator has been widely used in various in the field. However, the operating frequency of film bulk acoustic wave (FBAR) often drifts due to the influence of temperature. First of all, in a variety of complex environments, the detection of one of the parameters is often mixed with the influence of other parameters (especially the ambient temperature) on the sensor, which greatly reduces the detection accuracy of the sensor. Secondly, in some ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/25G01L1/26G01L11/04G01L19/04
CPCG01L1/255G01L1/26G01L11/04G01L19/04
Inventor 轩伟鹏顾聪聪骆季奎余厉阳
Owner 深圳市封神微电子有限公司
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