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Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure

A technology for detecting structure and electromagnetic radiation, applied in the structure of detecting electromagnetic radiation, in the field of manufacturing such structures, it can solve the problems of low total impedance and inability to obtain optimal absorption and so on

Pending Publication Date: 2021-07-23
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0016] In fact, if, according to the teaching of this document, it is possible to provide absorbing elements whose impedance is close to the impedance in vacuum, namely approximately 376.9Ω, the total impedance of the structure perceived by the electromagnetic waves to be absorbed is actually lower and therefore not for optimal absorption

Method used

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  • Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure
  • Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure
  • Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure

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Embodiment Construction

[0071] figure 1 The detection structure 10 according to the radiant thermal measurement type according to the present invention is shown, which is adapted to detect electromagnetic radiation.

[0072] This detection structure 10 is particularly suitable for detecting electromagnetic radiation within the infrared wavelength range. Therefore, the different values ​​indicated in the embodiments described below are related to the actual application, wherein the target wavelength range is far infrared, i.e., between 8 and 12 μm. Of course, these values ​​are only given as non-limiting examples, and from the present disclosure, those skilled in the art can be fully adjusted such that such detection structures 10 can be optimally detected in the wavelength range outside the infrared range. Electromagnetic radiation.

[0073] This detection structure 10 includes:

[0074] - The MOS-FET type transistor 100 associated with the first absorbing element is used to detect the temperature rise ...

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Abstract

The invention concerns an electromagnetic radiation detection structure (10) comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (100). The transistor comprises: at least one first and at least one second zone (111, 112) of a first type of conductivity; at least one third zone (113) separating the first and second zones (111, 112) from each other; and a gate electrode. The first zone (111), the third zone (113) and the second zone (112) are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone (113) along at least one lateral wall of said third zone (113).

Description

[0001] The present invention derived from the contractual contract awarded by the Ministry of France, and the French Ministry of Defense has certain rights to the present invention. Technical field [0002] The present invention relates to structures for detecting electromagnetic radiation, particularly for detecting electromagnetic radiation in the infrared range. [0003] More specifically, the present invention relates to a structure for detecting electromagnetic radiation and a method for manufacturing this structure. Background technique [0004] In order to detect electromagnetic radiation within the infrared wavelength range, the electromagnetic radiation detection structure of the radiant thermal measurement is known to be used in an electromagnetic radiation in the infrared wavelength range. [0005] This structure includes: [0006] - The absorbent element is configured to absorb electromagnetic radiation, which is usually provided in the form of a suspension film. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/02G01J5/08G01J5/20G01J5/24
CPCG01J5/024G01J5/0853G01J5/20G01J5/24H01L27/14669H01L27/14689
Inventor 阿卜杜卡迪尔·阿利亚内让-路易斯·乌夫里耶-比费克莱尔·维亚勒
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES