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Gate driving device, driving method, gate driving equipment and display system

A gate drive and electrode technology, used in static indicators, instruments, etc., to solve problems such as transistor leakage current problems

Active Publication Date: 2021-09-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In some existing bidirectional gate drive circuits, transistors based on LTPS process suffer from leakage current

Method used

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  • Gate driving device, driving method, gate driving equipment and display system
  • Gate driving device, driving method, gate driving equipment and display system
  • Gate driving device, driving method, gate driving equipment and display system

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Embodiment Construction

[0042] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same or similar items with basically the same function and effect. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their sequence is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit the difference.

[0043] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used as examples, illustrations or illustrations. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exempl...

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PUM

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Abstract

The invention discloses a gate driving device, a driving method, gate driving equipment and a display system, relates to the technical field of display, and is used for eliminating the electric leakage influence of a low-temperature polycrystalline silicon transistor while realizing bidirectional scanning. The gate driving device comprises an input circuit, a potential control circuit, a reset circuit and an output circuit. The output end of the input circuit, the control end of the potential control circuit, the input end of the potential control circuit and the control end of the output circuit are all coupled to a first node; the output end of the potential control circuit and the control end of the reset circuit are both coupled to a second node. The gate driving device has a forward scanning stage, a reverse scanning stage and a reset stage. The driving method of the gate driving device comprises the gate driving device provided by the technical scheme. The gate driving device provided by the invention is used in the display technology.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a gate driving device, a driving method, a gate driving device and a display system. Background technique [0002] At present, active matrix organic light-emitting diode (AMOLED for short) display applications are booming, and the gate driver on array substrate (Gate Driver OnArray, GOA for short) technology based on transistors is becoming more and more critical. Among them, low temperature polysilicon (LTPS for short) transistors have become the preferred material for AMOLED displays due to their high mobility, high stability and other advantages. [0003] In some existing bidirectional gate drive circuits, transistors based on LTPS technology suffer from leakage current. In order to avoid the adverse effect of excessive leakage on the circuit, it is necessary to design a gate drive circuit that can eliminate the effect of leakage of the LTPS transistor while scanning...

Claims

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Application Information

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IPC IPC(8): G09G3/3266
CPCG09G3/3266G09G2310/0264
Inventor 耿玓陈倩李泠卢年端刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI